DRA2115E . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: DRA2115E
Código: LN
Material: Si
Polaridad de transistor: Pre-Biased-PNP
Resistencia de Entrada Base R1 = 100 kOhm
Resistencia Base-Emisor R2 = 100 kOhm
Ratio típica de resistencia R1/R2 = 1
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.2 W
Tensión colector-base (Vcb): 50 V
Tensión colector-emisor (Vce): 50 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 80
Paquete / Cubierta: MINI3-G3-B
Búsqueda de reemplazo de transistor bipolar DRA2115E
DRA2115E Datasheet (PDF)
dra2115e.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRA2115ESilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC2115E Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. Mini3-G3-B Eco-friendly Halogen-free package Pin Name 1: Ba
dra2115t.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRA2115TSilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC2115T Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) Mini3-G3-B Contributes to miniaturization of sets, reduction of component c
dra2115g.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRA2115GSilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC2115G Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. Mini3-G3-B Eco-friendly Halogen-free package Pin Name 1: Ba
dra2114y.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRA2114YSilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC2114Y Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. Mini3-G3-B Pin Name Eco-friendly Halogen-free package 1: Base
dra2114e.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRA2114ESilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC2114E Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. Mini3-G3-B Eco-friendly Halogen-free package Pin Name 1: Base
dra2114t.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRA2114TSilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC2114T Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) Mini3-G3-B Contributes to miniaturization of sets, reduction of component c
dra2113z.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRA2113ZSilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC2113Z Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. Mini3-G3-B Eco-friendly Halogen-free package Pin Name 1: Base
Otros transistores... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
