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DRA3113Z . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: DRA3113Z
   Código: L1
   Material: Si
   Polaridad de transistor: Pre-Biased-PNP
   Resistencia de Entrada Base R1 = 1 kOhm
   Resistencia Base-Emisor R2 = 10 kOhm
   Ratio típica de resistencia R1/R2 = 0.1

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.1 W
   Tensión colector-base (Vcb): 50 V
   Tensión colector-emisor (Vce): 50 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 30
   Paquete / Cubierta: SSSMINI3-F2-B
 

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DRA3113Z Datasheet (PDF)

 ..1. Size:415K  panasonic
 dra3113z.pdf pdf_icon

DRA3113Z

This product complies with the RoHS Directive (EU 2002/95/EC).DRA3113ZSilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC3113ZDRA9113Z in SSSMini3 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SSSMini3-F2-B Eco-friendly Haloge

 8.1. Size:417K  panasonic
 dra3114e.pdf pdf_icon

DRA3113Z

This product complies with the RoHS Directive (EU 2002/95/EC).DRA3114ESilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC3114EDRA9114E in SSSMini3 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SSSMini3-F2-B Eco-friendly Haloge

 8.2. Size:416K  panasonic
 dra3115g.pdf pdf_icon

DRA3113Z

This product complies with the RoHS Directive (EU 2002/95/EC).DRA3115GSilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC3115GDRA9115G in SSSMini3 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SSSMini3-F2-B Eco-friendly Haloge

 8.3. Size:417K  panasonic
 dra3114t.pdf pdf_icon

DRA3113Z

This product complies with the RoHS Directive (EU 2002/95/EC).DRA3114TSilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC3114TDRA9114T in SSSMini3 type package Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) SSSMini3-F2-B Contributes to miniaturi

MOSTRAR MÁS

Otros transistores... DRA2152Z , DRA2514E , DRA2522J , DRA2523E , DRA2523Y , DRA2533Q , DRA2543E , DRA2L14Y , D965 , DRA3114E , DRA3114T , DRA3114Y , DRA3115E , DRA3115G , DRA3115T , DRA3123E , DRA3123J .

 

 
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