DRA3114Y . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: DRA3114Y
Código: LC
Material: Si
Polaridad de transistor: Pre-Biased-PNP
Resistencia de Entrada Base R1 = 10 kOhm
Resistencia Base-Emisor R2 = 47 kOhm
Ratio típica de resistencia R1/R2 = 0.21
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.1 W
Tensión colector-base (Vcb): 50 V
Tensión colector-emisor (Vce): 50 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 80
Paquete / Cubierta: SSSMINI3-F2-B
Búsqueda de reemplazo de transistor bipolar DRA3114Y
DRA3114Y Datasheet (PDF)
dra3114y.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRA3114YSilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC3114YDRA9114Y in SSSMini3 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SSSMini3-F2-B Eco-friendly Halogen-
dra3114e.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRA3114ESilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC3114EDRA9114E in SSSMini3 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SSSMini3-F2-B Eco-friendly Haloge
dra3114t.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRA3114TSilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC3114TDRA9114T in SSSMini3 type package Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) SSSMini3-F2-B Contributes to miniaturi
dra3115g.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRA3115GSilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC3115GDRA9115G in SSSMini3 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SSSMini3-F2-B Eco-friendly Haloge
dra3115e.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRA3115ESilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC3115EDRA9115E in SSSMini3 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SSSMini3-F2-B Eco-friendly Halogen-
dra3115t.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRA3115TSilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC3115TDRA9115T in SSSMini3 type package Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) SSSMini3-F2-B Contributes to miniatu
dra3113z.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRA3113ZSilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC3113ZDRA9113Z in SSSMini3 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SSSMini3-F2-B Eco-friendly Haloge
Otros transistores... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
History: CSC1943F | KT209V
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050