DRA3143X . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: DRA3143X
Código: L6
Material: Si
Polaridad de transistor: Pre-Biased-PNP
Resistencia de Entrada Base R1 = 4.7 kOhm
Resistencia Base-Emisor R2 = 10 kOhm
Ratio típica de resistencia R1/R2 = 0.47
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.1 W
Tensión colector-base (Vcb): 50 V
Tensión colector-emisor (Vce): 50 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 30
Paquete / Cubierta: SSSMINI3-F2-B
Búsqueda de reemplazo de transistor bipolar DRA3143X
DRA3143X Datasheet (PDF)
dra3143x.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRA3143XSilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC3143XDRA9143X in SSSMini3 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SSSMini3-F2-B Eco-friendly Haloge
dra3143z.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRA3143ZSilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC3143ZDRA9143Z in SSSMini3 type package Features Package High forward current transfer ratio hFE Code Low collector-emitter saturation voltage VCE(sat) SSSMini3-F2-B Contributes to miniaturization of sets, reduction
dra3143e.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRA3143ESilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC3143EDRA9143E in SSSMini3 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SSSMini3-F2-B Eco-friendly Haloge
dra3143t.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRA3143TSilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC3143TDRA9143T in SSSMini3 type package Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) SSSMini3-F2-B Contributes to miniaturi
dra3143y.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRA3143YSilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC3143YDRA9143Y in SSSMini3 type package Features Package High forward current transfer ratio hFE Code Low collector-emitter saturation voltage VCE(sat) SSSMini3-F2-B Contributes to miniaturization of sets, reducti
Otros transistores... 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N3055 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .
History: 2N2354 | 2N2175
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050