DRA3A15E . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: DRA3A15E
Código: GZ
Material: Si
Polaridad de transistor: Pre-Biased-PNP
Resistencia de Entrada Base R1 = 100 kOhm
Resistencia Base-Emisor R2 = 100 kOhm
Ratio típica de resistencia R1/R2 = 1
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.1 W
Tensión colector-base (Vcb): 50 V
Tensión colector-emisor (Vce): 50 V
Corriente del colector DC máxima (Ic): 0.08 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 80
Paquete / Cubierta: SSSMINI3-F2-B
Búsqueda de reemplazo de transistor bipolar DRA3A15E
DRA3A15E Datasheet (PDF)
dra3a15e.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRA3A15ESilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC3A15EDRA9A15E in SSSMini3 type package Package Features Code Low collector-emitter saturation voltage VCE(sat) SSSMini3-F2-B Contributes to miniaturization of sets, reduction of component count. Pin Name Eco
dra3a14y.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRA3A14YSilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC3A14YDRA9A14Y in SSSMini3 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SSSMini3-F2-B Eco-friendly Halo
dra3a14e.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRA3A14ESilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC3A14EDRA9A14E in SSSMini3 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SSSMini3-F2-B Eco-friendly Haloge
dra3a14t.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRA3A14TSilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC3A14TDRA9A14T in SSSMini3 type package Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) SSSMini3-F2-B Contributes to miniaturi
dra3a13z.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRA3A13ZSilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC3A13ZDRA9A13Z in SSSMini3 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SSSMini3-F2-B Eco-friendly Haloge
Otros transistores... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , BC327 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
History: 2SC2229Y | 2SA364
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050