DRA4123Y Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: DRA4123Y

Código: L3

Material: Si

Polaridad de transistor: Pre-Biased-PNP

Resistencia de Entrada Base R1 = 2.2 kOhm

Resistencia Base-Emisor R2 = 10 kOhm

Ratio típica de resistencia R1/R2 = 0.22

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.3 W

Tensión colector-base (Vcb): 50 V

Tensión colector-emisor (Vce): 50 V

Corriente del colector DC máxima (Ic): 0.1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hFE): 30

Encapsulados: NS-B2-B-B

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DRA4123Y datasheet

 ..1. Size:223K  panasonic
 dra4123y.pdf pdf_icon

DRA4123Y

This product complies with the RoHS Directive (EU 2002/95/EC). DRA4123Y Silicon PNP epitaxial planar type For digital circuits Complementary to DRC4123Y DRA2123Y in NS through hole type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, mount area reduction NS-B2-B-B Eco-friendly Halogen-free p

 7.1. Size:223K  panasonic
 dra4123j.pdf pdf_icon

DRA4123Y

This product complies with the RoHS Directive (EU 2002/95/EC). DRA4123J Silicon PNP epitaxial planar type For digital circuits Complementary to DRC4123J DRA2123J in NS through hole type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, mount area reduction NS-B2-B-B Eco-friendly Halogen-free

 8.1. Size:221K  panasonic
 dra4124t.pdf pdf_icon

DRA4123Y

This product complies with the RoHS Directive (EU 2002/95/EC). DRA4124T Silicon PNP epitaxial planar type For digital circuits Complementary to DRC4124T DRA2124T in NS through hole type package Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) NS-B2-B-B Contributes to miniat

 8.2. Size:348K  panasonic
 dra4124e.pdf pdf_icon

DRA4123Y

This product complies with the RoHS Directive (EU 2002/95/EC). DRA4124E Silicon PNP epitaxial planar type For digital circuits Complementary to DRC4124E DRA2124E in NS through hole type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, mount area reduction NS-B2-B-B Eco-friendly Halogen-free p

MOSTRAR MÁS

Otros transistores... DRA3A43X, DRA3A43Z, DRA3A44E, DRA4113Z, DRA4114E, DRA4114T, DRA4114Y, DRA4123J, TIP41, DRA4124E, DRA4124T, DRA4143E, DRA4143T, DRA4143X, DRA4143Z, DRA4144E, DRA4144T