DRA4143E . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: DRA4143E
Código: L5
Material: Si
Polaridad de transistor: Pre-Biased-PNP
Resistencia de Entrada Base R1 = 4.7 kOhm
Resistencia Base-Emisor R2 = 4.7 kOhm
Ratio típica de resistencia R1/R2 = 1
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.3 W
Tensión colector-base (Vcb): 50 V
Tensión colector-emisor (Vce): 50 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 20
Paquete / Cubierta: NS-B2-B-B
Búsqueda de reemplazo de transistor bipolar DRA4143E
DRA4143E Datasheet (PDF)
dra4143e.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
This product complies with the RoHS Directive (EU 2002/95/EC).DRA4143ESilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC4143EDRA2143E in NS through hole type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, mount area reduction NS-B2-B-B Eco-friendly Halogen-free
dra4143t.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
This product complies with the RoHS Directive (EU 2002/95/EC).DRA4143TSilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC4143TDRA2143T in NS through hole type package Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) NS-B2-B-B Contributes to miniat
dra4143z.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
This product complies with the RoHS Directive (EU 2002/95/EC).DRA4143ZSilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC4143ZDRA2143Z in NS through hole type package Features Package High forward current transfer ratio hFE Code Low collector-emitter saturation voltage VCE(sat) NS-B2-B-B Contributes to miniaturization of sets, mount ar
dra4143x.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
This product complies with the RoHS Directive (EU 2002/95/EC).DRA4143XSilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC4143XDRA2143X in NS through hole type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, mount area reduction NS-B2-B-B Eco-friendly Halogen-free p
Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D882P , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
History: CM5160
History: CM5160
![DRA4143E](https://alltransistors.com/images/us.png)
![DRA4143E](https://alltransistors.com/images/es.png)
![DRA4143E](https://alltransistors.com/images/ru.png)
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: GN1A3Q | D965-KEHE | 2SD662B | 2SD661A | 2SC3080 | S9018L | S9012J | 2SA73L | 2SA73H | 2SA1015H | WT955 | TS13005CK | TP5001P3 | SS8550W-L | SS8550W-J | SS8550W-H | SS8550E | SS8550D | SS8550C | SS8050E | SS8050D