DRA4143E Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: DRA4143E

Código: L5

Material: Si

Polaridad de transistor: Pre-Biased-PNP

Resistencia de Entrada Base R1 = 4.7 kOhm

Resistencia Base-Emisor R2 = 4.7 kOhm

Ratio típica de resistencia R1/R2 = 1

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.3 W

Tensión colector-base (Vcb): 50 V

Tensión colector-emisor (Vce): 50 V

Corriente del colector DC máxima (Ic): 0.1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hFE): 20

Encapsulados: NS-B2-B-B

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DRA4143E datasheet

 ..1. Size:346K  panasonic
 dra4143e.pdf pdf_icon

DRA4143E

This product complies with the RoHS Directive (EU 2002/95/EC). DRA4143E Silicon PNP epitaxial planar type For digital circuits Complementary to DRC4143E DRA2143E in NS through hole type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, mount area reduction NS-B2-B-B Eco-friendly Halogen-free

 7.1. Size:221K  panasonic
 dra4143t.pdf pdf_icon

DRA4143E

This product complies with the RoHS Directive (EU 2002/95/EC). DRA4143T Silicon PNP epitaxial planar type For digital circuits Complementary to DRC4143T DRA2143T in NS through hole type package Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) NS-B2-B-B Contributes to miniat

 7.2. Size:224K  panasonic
 dra4143z.pdf pdf_icon

DRA4143E

This product complies with the RoHS Directive (EU 2002/95/EC). DRA4143Z Silicon PNP epitaxial planar type For digital circuits Complementary to DRC4143Z DRA2143Z in NS through hole type package Features Package High forward current transfer ratio hFE Code Low collector-emitter saturation voltage VCE(sat) NS-B2-B-B Contributes to miniaturization of sets, mount ar

 7.3. Size:224K  panasonic
 dra4143x.pdf pdf_icon

DRA4143E

This product complies with the RoHS Directive (EU 2002/95/EC). DRA4143X Silicon PNP epitaxial planar type For digital circuits Complementary to DRC4143X DRA2143X in NS through hole type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, mount area reduction NS-B2-B-B Eco-friendly Halogen-free p

MOSTRAR MÁS

Otros transistores... DRA4113Z, DRA4114E, DRA4114T, DRA4114Y, DRA4123J, DRA4123Y, DRA4124E, DRA4124T, S8050, DRA4143T, DRA4143X, DRA4143Z, DRA4144E, DRA4144T, DRA4144V, DRA4144W, DRA4152Z