DRA4144W Todos los transistores

 

DRA4144W . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: DRA4144W
   Código: LK
   Material: Si
   Polaridad de transistor: Pre-Biased-PNP
   Resistencia de Entrada Base R1 = 47 kOhm
   Resistencia Base-Emisor R2 = 22 kOhm
   Ratio típica de resistencia R1/R2 = 2.1

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.3 W
   Tensión colector-base (Vcb): 50 V
   Tensión colector-emisor (Vce): 50 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 60
   Paquete / Cubierta: NS-B2-B-B
 

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DRA4144W Datasheet (PDF)

 ..1. Size:223K  panasonic
 dra4144w.pdf pdf_icon

DRA4144W

This product complies with the RoHS Directive (EU 2002/95/EC).DRA4144WSilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC4144WDRA2144W in NS through hole type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, mount area reduction NS-B2-B-B Eco-friendly Halogen-free p

 7.1. Size:220K  panasonic
 dra4144t.pdf pdf_icon

DRA4144W

This product complies with the RoHS Directive (EU 2002/95/EC).DRA4144TSilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC4144TDRA2144T in NS through hole type package Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) NS-B2-B-B Contributes to miniat

 7.2. Size:190K  panasonic
 dra4144v.pdf pdf_icon

DRA4144W

This product complies with the RoHS Directive (EU 2002/95/EC).DRA4144V (Tentative)Silicon PNP epitaxial planar typeFor digital circuits Packaging PackageRadial type: 5000 pcs / carton Code NS-B1-B Absolute Maximum Ratings Ta = 25C Pin NameParameter Symbol Rating Unit 1: Emitter 2: CollectorCollector-base voltage (Emitter open) VCBO 50 V 3: BaseC

 7.3. Size:350K  panasonic
 dra4144e.pdf pdf_icon

DRA4144W

This product complies with the RoHS Directive (EU 2002/95/EC).DRA4144ESilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC4144EDRA2144E in NS through hole type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, mount area reduction NS-B2-B-B Eco-friendly Halogen-free p

MOSTRAR MÁS

Otros transistores... DRA4124T , DRA4143E , DRA4143T , DRA4143X , DRA4143Z , DRA4144E , DRA4144T , DRA4144V , A1941 , DRA4152Z , DRA4514E , DRA4523E , DRA4523Y , DRA4543E , DRA5113Z , DRA5114E , DRA5114T .

History: ZT1489 | MT3S15TU

 

 
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