DRA4144W Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: DRA4144W

Código: LK

Material: Si

Polaridad de transistor: Pre-Biased-PNP

Resistencia de Entrada Base R1 = 47 kOhm

Resistencia Base-Emisor R2 = 22 kOhm

Ratio típica de resistencia R1/R2 = 2.1

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.3 W

Tensión colector-base (Vcb): 50 V

Tensión colector-emisor (Vce): 50 V

Corriente del colector DC máxima (Ic): 0.1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hFE): 60

Encapsulados: NS-B2-B-B

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DRA4144W datasheet

 ..1. Size:223K  panasonic
 dra4144w.pdf pdf_icon

DRA4144W

This product complies with the RoHS Directive (EU 2002/95/EC). DRA4144W Silicon PNP epitaxial planar type For digital circuits Complementary to DRC4144W DRA2144W in NS through hole type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, mount area reduction NS-B2-B-B Eco-friendly Halogen-free p

 7.1. Size:220K  panasonic
 dra4144t.pdf pdf_icon

DRA4144W

This product complies with the RoHS Directive (EU 2002/95/EC). DRA4144T Silicon PNP epitaxial planar type For digital circuits Complementary to DRC4144T DRA2144T in NS through hole type package Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) NS-B2-B-B Contributes to miniat

 7.2. Size:190K  panasonic
 dra4144v.pdf pdf_icon

DRA4144W

This product complies with the RoHS Directive (EU 2002/95/EC). DRA4144V (Tentative) Silicon PNP epitaxial planar type For digital circuits Packaging Package Radial type 5000 pcs / carton Code NS-B1-B Absolute Maximum Ratings Ta = 25 C Pin Name Parameter Symbol Rating Unit 1 Emitter 2 Collector Collector-base voltage (Emitter open) VCBO 50 V 3 Base C

 7.3. Size:350K  panasonic
 dra4144e.pdf pdf_icon

DRA4144W

This product complies with the RoHS Directive (EU 2002/95/EC). DRA4144E Silicon PNP epitaxial planar type For digital circuits Complementary to DRC4144E DRA2144E in NS through hole type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, mount area reduction NS-B2-B-B Eco-friendly Halogen-free p

MOSTRAR MÁS

Otros transistores... DRA4124T, DRA4143E, DRA4143T, DRA4143X, DRA4143Z, DRA4144E, DRA4144T, DRA4144V, D882, DRA4152Z, DRA4514E, DRA4523E, DRA4523Y, DRA4543E, DRA5113Z, DRA5114E, DRA5114T