DRA4144W . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: DRA4144W
Código: LK
Material: Si
Polaridad de transistor: Pre-Biased-PNP
Resistencia de Entrada Base R1 = 47 kOhm
Resistencia Base-Emisor R2 = 22 kOhm
Ratio típica de resistencia R1/R2 = 2.1
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.3 W
Tensión colector-base (Vcb): 50 V
Tensión colector-emisor (Vce): 50 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 60
Paquete / Cubierta: NS-B2-B-B
Búsqueda de reemplazo de transistor bipolar DRA4144W
DRA4144W Datasheet (PDF)
dra4144w.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
This product complies with the RoHS Directive (EU 2002/95/EC).DRA4144WSilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC4144WDRA2144W in NS through hole type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, mount area reduction NS-B2-B-B Eco-friendly Halogen-free p
dra4144t.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
This product complies with the RoHS Directive (EU 2002/95/EC).DRA4144TSilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC4144TDRA2144T in NS through hole type package Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) NS-B2-B-B Contributes to miniat
dra4144v.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
This product complies with the RoHS Directive (EU 2002/95/EC).DRA4144V (Tentative)Silicon PNP epitaxial planar typeFor digital circuits Packaging PackageRadial type: 5000 pcs / carton Code NS-B1-B Absolute Maximum Ratings Ta = 25C Pin NameParameter Symbol Rating Unit 1: Emitter 2: CollectorCollector-base voltage (Emitter open) VCBO 50 V 3: BaseC
dra4144e.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
This product complies with the RoHS Directive (EU 2002/95/EC).DRA4144ESilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC4144EDRA2144E in NS through hole type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, mount area reduction NS-B2-B-B Eco-friendly Halogen-free p
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: DMG56302
History: DMG56302
![DRA4144W](https://alltransistors.com/images/us.png)
![DRA4144W](https://alltransistors.com/images/es.png)
![DRA4144W](https://alltransistors.com/images/ru.png)
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: GN1A3Q | D965-KEHE | 2SD662B | 2SD661A | 2SC3080 | S9018L | S9012J | 2SA73L | 2SA73H | 2SA1015H | WT955 | TS13005CK | TP5001P3 | SS8550W-L | SS8550W-J | SS8550W-H | SS8550E | SS8550D | SS8550C | SS8050E | SS8050D