DRA4523E Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: DRA4523E

Código: SH

Material: Si

Polaridad de transistor: Pre-Biased-PNP

Resistencia de Entrada Base R1 = 2.2 kOhm

Resistencia Base-Emisor R2 = 2.2 kOhm

Ratio típica de resistencia R1/R2 = 1

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.3 W

Tensión colector-base (Vcb): 50 V

Tensión colector-emisor (Vce): 50 V

Corriente del colector DC máxima (Ic): 0.5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hFE): 40

Encapsulados: NS-B1-B

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DRA4523E datasheet

 ..1. Size:139K  panasonic
 dra4523e.pdf pdf_icon

DRA4523E

DRA4523E Total pages page Tentative DRA4523E Silicon PNP epitaxial planar type For digital circuits Marking Symbol SH Package Code NS-B1-B Internal Connection Absolute Maximum Ratings Ta = 25 C R1 C Parameter Symbol Rating Unit B Collector-base voltage (Emitter open) VCBO -50 V Collector-emitter voltage (Base open) VCEO -50 V Collector current IC -500 mA R2 Total power

 7.1. Size:351K  panasonic
 dra4523y.pdf pdf_icon

DRA4523E

This product complies with the RoHS Directive (EU 2002/95/EC). DRA4523Y Silicon PNP epitaxial planar type For digital circuits Complementary to DRC4523Y DRA2523Y in NS through hole type package Features Package Contributes to miniaturization of sets, mount area reduction Code Eco-friendly Halogen-free package NS-B2-B Package dimension clicks here. Click! Pac

 9.1. Size:452K  panasonic
 dra4543e.pdf pdf_icon

DRA4523E

DRA4543E Total pages page Tentative DRA4543E Silicon PNP epitaxial planar type For digital circuits Marking Symbol UY Package Code NS-B1-B Internal Connection Absolute Maximum Ratings Ta = 25 C R1 C Parameter Symbol Rating Unit B Collector-base voltage (Emitter open) VCBO -50 V Collector-emitter voltage (Base open) VCEO -50 V Collector current IC -500 mA R2 Total power

 9.2. Size:139K  panasonic
 dra4514e.pdf pdf_icon

DRA4523E

DRA4514E Total pages page Tentative DRA4514E Silicon PNP epitaxial planar type For digital circuits Marking Symbol UZ Package Code NS-B1-B Internal Connection Absolute Maximum Ratings Ta = 25 C R1 C Parameter Symbol Rating Unit B Collector-base voltage (Emitter open) VCBO -50 V Collector-emitter voltage (Base open) VCEO -50 V Collector current IC -500 mA R2 Total power

MOSTRAR MÁS

Otros transistores... DRA4143X, DRA4143Z, DRA4144E, DRA4144T, DRA4144V, DRA4144W, DRA4152Z, DRA4514E, 13009, DRA4523Y, DRA4543E, DRA5113Z, DRA5114E, DRA5114T, DRA5114Y, DRA5115E, DRA5115G