DRA4543E . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: DRA4543E
Código: UY
Material: Si
Polaridad de transistor: Pre-Biased-PNP
Resistencia de Entrada Base R1 = 4.7 kOhm
Resistencia Base-Emisor R2 = 4.7 kOhm
Ratio típica de resistencia R1/R2 = 1
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.3 W
Tensión colector-base (Vcb): 50 V
Tensión colector-emisor (Vce): 50 V
Corriente del colector DC máxima (Ic): 0.5 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 50
Paquete / Cubierta: NS-B1-B
Búsqueda de reemplazo de transistor bipolar DRA4543E
DRA4543E Datasheet (PDF)
dra4543e.pdf
DRA4543ETotal pages pageTentativeDRA4543ESilicon PNP epitaxial planar typeFor digital circuitsMarking Symbol : UYPackage Code : NS-B1-BInternal ConnectionAbsolute Maximum RatingsTa = 25 CR1CParameter Symbol Rating UnitBCollector-base voltage (Emitter open) VCBO -50 VCollector-emitter voltage (Base open) VCEO -50 VCollector current IC -500 mAR2Total power
dra4523y.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRA4523YSilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC4523YDRA2523Y in NS through hole type package Features Package Contributes to miniaturization of sets, mount area reduction Code Eco-friendly Halogen-free package NS-B2-BPackage dimension clicks here. Click! Pac
dra4514e.pdf
DRA4514ETotal pages pageTentativeDRA4514ESilicon PNP epitaxial planar typeFor digital circuitsMarking Symbol : UZPackage Code : NS-B1-BInternal ConnectionAbsolute Maximum RatingsTa = 25 CR1CParameter Symbol Rating UnitBCollector-base voltage (Emitter open) VCBO -50 VCollector-emitter voltage (Base open) VCEO -50 VCollector current IC -500 mAR2Total power
dra4523e.pdf
DRA4523ETotal pages pageTentativeDRA4523ESilicon PNP epitaxial planar typeFor digital circuitsMarking Symbol : SHPackage Code : NS-B1-BInternal ConnectionAbsolute Maximum RatingsTa = 25 CR1CParameter Symbol Rating UnitBCollector-base voltage (Emitter open) VCBO -50 VCollector-emitter voltage (Base open) VCEO -50 VCollector current IC -500 mAR2Total power
Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050