DRAF114E Todos los transistores

 

DRAF114E . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: DRAF114E
   Código: LB
   Material: Si
   Polaridad de transistor: Pre-Biased-PNP
   Resistencia de Entrada Base R1 = 10 kOhm
   Resistencia Base-Emisor R2 = 10 kOhm
   Ratio típica de resistencia R1/R2 = 1

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.1 W
   Tensión colector-base (Vcb): 50 V
   Tensión colector-emisor (Vce): 50 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 35
   Paquete / Cubierta: ML3-N4-B
 

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DRAF114E Datasheet (PDF)

 ..1. Size:224K  panasonic
 draf114e.pdf pdf_icon

DRAF114E

This product complies with the RoHS Directive (EU 2002/95/EC).DRAF114ESilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRCF114EDRA3114E in ML3 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, mount area reduction ML3-N4-B Eco-friendly Halogen-free packagePac

 7.1. Size:223K  panasonic
 draf114t.pdf pdf_icon

DRAF114E

This product complies with the RoHS Directive (EU 2002/95/EC).DRAF114TSilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRCF114TDRA3114T in ML3 type package Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) ML3-N4-B Contributes to miniaturization of

 7.2. Size:225K  panasonic
 draf114y.pdf pdf_icon

DRAF114E

This product complies with the RoHS Directive (EU 2002/95/EC).DRAF114YSilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRCF114YDRA3114Y in ML3 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, mount area reduction ML3-N4-B Eco-friendly Halogen-free packagePacka

 8.1. Size:225K  panasonic
 draf113z.pdf pdf_icon

DRAF114E

This product complies with the RoHS Directive (EU 2002/95/EC).DRAF113ZSilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRCF113ZDRA3113Z in ML3 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, mount area reduction ML3-N4-B Eco-friendly Halogen-free packagePac

MOSTRAR MÁS

Otros transistores... DRA9A24E , DRA9A43E , DRA9A43T , DRA9A43X , DRA9A43Z , DRA9A44E , DRA9A44W , DRAF113Z , 2N3055 , DRAF114T , DRAF114Y , DRAF115E , DRAF123J , DRAF123Y , DRAF124E , DRAF124T , DRAF124X .

History: MMBT3251 | KT336E

 

 
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