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DRAF124E . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: DRAF124E
   Código: LE
   Material: Si
   Polaridad de transistor: Pre-Biased-PNP
   Resistencia de Entrada Base R1 = 22 kOhm
   Resistencia Base-Emisor R2 = 22 kOhm
   Ratio típica de resistencia R1/R2 = 1

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.1 W
   Tensión colector-base (Vcb): 50 V
   Tensión colector-emisor (Vce): 50 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 60
   Paquete / Cubierta: ML3-N4-B
 

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DRAF124E Datasheet (PDF)

 ..1. Size:224K  panasonic
draf124e.pdf pdf_icon

DRAF124E

This product complies with the RoHS Directive (EU 2002/95/EC).DRAF124ESilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRCF124EDRA3124E in ML3 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, mount area reduction ML3-N4-B Eco-friendly Halogen-free packagePacka

 7.1. Size:403K  panasonic
draf124x.pdf pdf_icon

DRAF124E

DRAF124XTotal pages pageTentativeDRAF124XSilicon PNP epitaxial planar typeFor digital circuitsMarking Symbol : LFPackage Code : ML3-N4-BInternal ConnectionAbsolute Maximum RatingsTa = 25 CR1CParameter Symbol Rating UnitBCollector-base voltage (Emitter open) VCBO -50 VCollector-emitter voltage (Base open) VCEO -50 VCollector current IC -100 mAR2Total powe

 7.2. Size:223K  panasonic
draf124t.pdf pdf_icon

DRAF124E

This product complies with the RoHS Directive (EU 2002/95/EC).DRAF124TSilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRCF124TDRA3124T in ML3 type package Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) ML3-N4-B Contributes to miniaturization of

 8.1. Size:225K  panasonic
draf123j.pdf pdf_icon

DRAF124E

This product complies with the RoHS Directive (EU 2002/95/EC).DRAF123JSilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRCF123JDRA3123J in ML3 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, mount area reduction ML3-N4-B Eco-friendly Halogen-free packageP

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , BC546 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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