DRAF124T . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: DRAF124T
Código: LH
Material: Si
Polaridad de transistor: Pre-Biased-PNP
Resistencia de Entrada Base R1 = 22 kOhm
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.1 W
Tensión colector-base (Vcb): 50 V
Tensión colector-emisor (Vce): 50 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 160
Paquete / Cubierta: ML3-N4-B
Búsqueda de reemplazo de transistor bipolar DRAF124T
DRAF124T Datasheet (PDF)
draf124t.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRAF124TSilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRCF124TDRA3124T in ML3 type package Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) ML3-N4-B Contributes to miniaturization of
draf124x.pdf
DRAF124XTotal pages pageTentativeDRAF124XSilicon PNP epitaxial planar typeFor digital circuitsMarking Symbol : LFPackage Code : ML3-N4-BInternal ConnectionAbsolute Maximum RatingsTa = 25 CR1CParameter Symbol Rating UnitBCollector-base voltage (Emitter open) VCBO -50 VCollector-emitter voltage (Base open) VCEO -50 VCollector current IC -100 mAR2Total powe
draf124e.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRAF124ESilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRCF124EDRA3124E in ML3 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, mount area reduction ML3-N4-B Eco-friendly Halogen-free packagePacka
draf123j.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRAF123JSilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRCF123JDRA3123J in ML3 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, mount area reduction ML3-N4-B Eco-friendly Halogen-free packageP
draf123y.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRAF123YSilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRCF123YDRA3123Y in ML3 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, mount area reduction ML3-N4-B Eco-friendly Halogen-free packagePac
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Liste
Recientemente añadidas las descripciónes de los transistores:
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