DRAQA52Z . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: DRAQA52Z
Código: G1
Material: Si
Polaridad de transistor: Pre-Biased-PNP
Resistencia de Entrada Base R1 = 0.51 kOhm
Resistencia Base-Emisor R2 = 5.1 kOhm
Ratio típica de resistencia R1/R2 = 0.1
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.1 W
Tensión colector-base (Vcb): 50 V
Tensión colector-emisor (Vce): 50 V
Corriente del colector DC máxima (Ic): 0.08 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 20
Paquete / Cubierta: USSMINI3-F1-B
Búsqueda de reemplazo de transistor bipolar DRAQA52Z
DRAQA52Z Datasheet (PDF)
draqa52z.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRAQA52ZSilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRCQA52ZDRA3152Z in USSMini3 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. USSMini3-F1-B Eco-friendly Haloge
draqa44t.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRAQA44TSilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRCQA44TDRA3144T in USSMini3 type package Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) USSMini3-F1-B Contributes to miniaturi
draqa15t.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRAQA15TSilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRCQA15TDRA3115T in USSMini3 type package Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) USSMini3-F1-B Contributes to miniaturi
draqa24t.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRAQA24TSilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRCQA24TDRA3124T in USSMini3 type package Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) USSMini3-F1-B Contributes to miniaturi
draqa24x.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRAQA24XSilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRCQA24XDRA3124X in USSMini3 type package Features Package High forward current transfer ratio hFE Code Low collector-emitter saturation voltage VCE(sat) USSMini3-F1-B Contributes to miniaturization of sets, reduction
draqa23e.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRAQA23ESilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRCQA23EDRA3123E in USSMini3 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. USSMini3-F1-B Eco-friendly Haloge
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: GT330D | 2SA898
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050