DRC3115T . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: DRC3115T
Código: NT
Material: Si
Polaridad de transistor: Pre-Biased-NPN
Resistencia de Entrada Base R1 = 100 kOhm
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.1 W
Tensión colector-base (Vcb): 50 V
Tensión colector-emisor (Vce): 50 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 160
Paquete / Cubierta: SSSMINI3-F2-B
Búsqueda de reemplazo de transistor bipolar DRC3115T
DRC3115T Datasheet (PDF)
drc3115t.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRC3115TSilicon NPN epitaxial planar typeFor digital circuitsComplementary to DRA3115TDRC9115T in SSSMini3 type package Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) SSSMini3-F2-B Contributes to miniaturi
drc3115g.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRC3115GSilicon NPN epitaxial planar typeFor digital circuitsComplementary to DRA3115GDRC9115G in SSSMini3 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SSSMini3-F2-B Eco-friendly Haloge
drc3115e.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRC3115ESilicon NPN epitaxial planar typeFor digital circuitsComplementary to DRA3115EDRC9115E in SSSMini3 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SSSMini3-F2-B Eco-friendly Haloge
drc3114t.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRC3114TSilicon NPN epitaxial planar typeFor digital circuitsComplementary to DRA3114TDRC9114T in SSSMini3 type package Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) SSSMini3-F2-B Contributes to miniaturiza
drc3114e.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRC3114ESilicon NPN epitaxial planar typeFor digital circuitsComplementary to DRA3114EDRC9114E in SSSMini3 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SSSMini3-F2-B Eco-friendly Haloge
drc3114y.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRC3114YSilicon NPN epitaxial planar typeFor digital circuitsComplementary to DRA3114YDRC9114Y in SSSMini3 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SSSMini3-F2-B Eco-friendly Haloge
drc3114w.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRC3114WSilicon NPN epitaxial planar typeFor digital circuitsComplementary to DRA3114WDRC9114W in SSSMini3 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SSSMini3-F2-B Eco-friendly Haloge
drc3113z.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRC3113ZSilicon NPN epitaxial planar typeFor digital circuitsComplementary to DRA3113ZDRC9113Z in SSSMini3 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SSSMini3-F2-B Eco-friendly Haloge
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
