DRC3124E . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: DRC3124E
Código: NE
Material: Si
Polaridad de transistor: Pre-Biased-NPN
Resistencia de Entrada Base R1 = 22 kOhm
Resistencia Base-Emisor R2 = 22 kOhm
Ratio típica de resistencia R1/R2 = 1
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.1 W
Tensión colector-base (Vcb): 50 V
Tensión colector-emisor (Vce): 50 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 60
Paquete / Cubierta: SSSMINI3-F2-B
Búsqueda de reemplazo de transistor bipolar DRC3124E
DRC3124E Datasheet (PDF)
drc3124e.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRC3124ESilicon NPN epitaxial planar typeFor digital circuitsComplementary to DRA3124EDRC9124E in SSSMini3 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SSSMini3-F2-B Eco-friendly Haloge
drc3124t.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRC3124TSilicon NPN epitaxial planar typeFor digital circuitsComplementary to DRA3124TDRC9124T in SSSMini3 type package Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) SSSMini3-F2-B Contributes to miniatu
drc3124x.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRC3124XSilicon NPN epitaxial planar typeFor digital circuitsComplementary to DRA3124XDRC9124X in SSSMini3 type package Features Package High forward current transfer ratio hFE Code Low collector-emitter saturation voltage VCE(sat) SSSMini3-F2-B Contributes to miniaturization of sets, reducti
drc3123e.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRC3123ESilicon NPN epitaxial planar typeFor digital circuitsComplementary to DRA3123EDRC9123E in SSSMini3 type package Features Package Contributes to miniaturization of sets, reduction of component count. Code Eco-friendly Halogen-free package SSSMini3-F2-B Pin Name 1: Base Packaging 2
drc3123j.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRC3123JSilicon NPN epitaxial planar typeFor digital circuitsComplementary to DRA3123JDRC9123J in SSSMini3 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SSSMini3-F2-B Eco-friendly Halogen-
Otros transistores... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
History: BC549CBK | 2SA885 | 2SA1889C | 2SA579
History: BC549CBK | 2SA885 | 2SA1889C | 2SA579
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050