DRC3A14Y . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: DRC3A14Y
Código: JJ
Material: Si
Polaridad de transistor: Pre-Biased-NPN
Resistencia de Entrada Base R1 = 10 kOhm
Resistencia Base-Emisor R2 = 47 kOhm
Ratio típica de resistencia R1/R2 = 0.21
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.1 W
Tensión colector-base (Vcb): 50 V
Tensión colector-emisor (Vce): 50 V
Corriente del colector DC máxima (Ic): 0.08 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 80
Paquete / Cubierta: SSSMINI3-F2-B
Búsqueda de reemplazo de transistor bipolar DRC3A14Y
DRC3A14Y Datasheet (PDF)
drc3a14y.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRC3A14YSilicon NPN epitaxial planar typeFor digital circuitsComplementary to DRA3A14YDRC9A14Y in SSSMini3 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SSSMini3-F2-B Eco-friendly Halogen-
drc3a14e.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRC3A14ESilicon NPN epitaxial planar typeFor digital circuitsComplementary to DRA3A14EDRC9A14E in SSSMini3 type package Package Features Code Low collector-emitter saturation voltage VCE(sat) SSSMini3-F2-B Contributes to miniaturization of sets, reduction of component count. Pin Name Eco
drc3a14t.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRC3A14TSilicon NPN epitaxial planar typeFor digital circuitsComplementary to DRA3A14TDRC9A14T in SSSMini3 type package Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) SSSMini3-F2-B Contributes to miniatu
drc3a15e.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRC3A15ESilicon NPN epitaxial planar typeFor digital circuitsComplementary to DRA3A15EDRC9A15E in SSSMini3 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SSSMini3-F2-B Eco-friendly Haloge
drc3a13z.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRC3A13ZSilicon NPN epitaxial planar typeFor digital circuitsComplementary to DRA3A13ZDRC9A13Z in SSSMini3 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SSSMini3-F2-B Eco-friendly Haloge
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: AU101 | 2SA794
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050