DRC4144E . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: DRC4144E
Código: NL
Material: Si
Polaridad de transistor: Pre-Biased-NPN
Resistencia de Entrada Base R1 = 47 kOhm
Resistencia Base-Emisor R2 = 47 kOhm
Ratio típica de resistencia R1/R2 = 1
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.3 W
Tensión colector-base (Vcb): 50 V
Tensión colector-emisor (Vce): 50 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 80
Paquete / Cubierta: NS-B2-B-B
Búsqueda de reemplazo de transistor bipolar DRC4144E
DRC4144E Datasheet (PDF)
drc4144e.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRC4144ESilicon NPN epitaxial planar typeFor digital circuitsComplementary to DRA4144EDRC2144E in NS through hole type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, mount area reduction NS-B2-B-B Eco-friendly Halogen-free p
drc4144w.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRC4144WSilicon NPN epitaxial planar typeFor digital circuitsComplementary to DRA4144WDRC2144W in NS through hole type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, mount area reduction NS-B2-B-B Eco-friendly Halogen-free
drc4144t.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRC4144TSilicon NPN epitaxial planar typeFor digital circuitsComplementary to DRA4144TDRC2144T in NS through hole type package Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) NS-B2-B-B Contributes to miniat
drc4144v.pdf
DRC4144VTotal pages pageTentativeDRC4144VSilicon NPN epitaxial planar typeFor digital circuitsMarking Symbol : NJPackage Code : NS-B1-B-BAbsolute Maximum RatingsTa = 25 CInternal ConnectionParameter Symbol Rating UnitR1CCollector-base voltage (Emitter open) VCBO 50 VBVCEO 50 VCollector-emitter voltage (Base open)Collector current IC 100 mAR2Total power
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: BC618 | 2N1507
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050