DRC9115E . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: DRC9115E
   Código: NN
   Material: Si
   Polaridad de transistor: Pre-Biased-NPN
   Resistencia de Entrada Base R1 = 100 kOhm
   Resistencia Base-Emisor R2 = 100 kOhm
   Ratio típica de resistencia R1/R2 = 1

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 0.125 W
   Tensión colector-base (Vcb): 50 V
   Tensión colector-emisor (Vce): 50 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hfe): 80
Paquete / Cubierta: SSMINI3-F3-B

Búsqueda de reemplazo de transistor bipolar DRC9115E

DRC9115E Datasheet (PDF)

..1. Size:411K panasonic
drc9115e.pdf

This product complies with the RoHS Directive (EU 2002/95/EC).DRC9115ESilicon NPN epitaxial planar typeFor digital circuitsComplementary to DRA9115EDRC5115E in SSMini3 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SSMini3-F3-B Eco-friendly Haloge

7.1. Size:398K panasonic
drc9115g.pdf

This product complies with the RoHS Directive (EU 2002/95/EC).DRC9115GSilicon NPN epitaxial planar typeFor digital circuitsComplementary to DRA9115GDRC5115G in SSMini3 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SSMini3-F3-B Eco-friendly Halogen

7.2. Size:406K panasonic
drc9115t.pdf

This product complies with the RoHS Directive (EU 2002/95/EC).DRC9115TSilicon NPN epitaxial planar typeFor digital circuitsComplementary to DRA9115TDRC5115T in SSMini3 type package Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) SSMini3-F3-B Contributes to miniaturiza

8.1. Size:401K panasonic
drc9114w.pdf

This product complies with the RoHS Directive (EU 2002/95/EC).DRC9114WSilicon NPN epitaxial planar typeFor digital circuitsComplementary to DRA9114WDRC5114W in SSMini3 type package Package Features Code Low collector-emitter saturation voltage VCE(sat) Contributes to miniaturization of sets, reduction of component count. SSMini3-F3-B Pin Name Eco-fri

8.2. Size:408K panasonic
drc9114t.pdf

This product complies with the RoHS Directive (EU 2002/95/EC).DRC9114TSilicon NPN epitaxial planar typeFor digital circuitsComplementary to DRA9114TDRC5114T in SSMini3 type package Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) SSMini3-F3-B Contributes to miniaturizati

8.3. Size:406K panasonic
drc9114y.pdf

This product complies with the RoHS Directive (EU 2002/95/EC).DRC9114YSilicon NPN epitaxial planar typeFor digital circuitsComplementary to DRA9114YDRC5114Y in SSMini3 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SSMini3-F3-B Eco-friendly Halogen-fr

8.4. Size:405K panasonic
drc9114e.pdf

This product complies with the RoHS Directive (EU 2002/95/EC).DRC9114ESilicon NPN epitaxial planar typeFor digital circuitsComplementary to DRA9114EDRC5114E in SSMini3 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SSMini3-F3-B Eco-friendly Halogen-

8.5. Size:405K panasonic
drc9113z.pdf

This product complies with the RoHS Directive (EU 2002/95/EC).DRC9113ZSilicon NPN epitaxial planar typeFor digital circuitsComplementary to DRA9113ZDRC5113Z in SSMini3 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SSMini3-F3-B Eco-friendly Halogen-

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: 2SA779

Liste

Recientemente añadidas las descripciónes de los transistores:

BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050