DRCQA23E . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: DRCQA23E
Código: J3
Material: Si
Polaridad de transistor: Pre-Biased-NPN
Resistencia de Entrada Base R1 = 2.2 kOhm
Resistencia Base-Emisor R2 = 2.2 kOhm
Ratio típica de resistencia R1/R2 = 1
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.1 W
Tensión colector-base (Vcb): 50 V
Tensión colector-emisor (Vce): 50 V
Corriente del colector DC máxima (Ic): 0.08 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 6
Paquete / Cubierta: USSMINI3-F1-B
Búsqueda de reemplazo de transistor bipolar DRCQA23E
DRCQA23E Datasheet (PDF)
drcqa23e.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRCQA23ESilicon NPN epitaxial planar typeFor digital circuitsComplementary to DRAQA23EDRC3123E in USSMini3 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. USSMini3-F1-B Eco-friendly Halogen-
drcqa24t.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRCQA24TSilicon NPN epitaxial planar typeFor digital circuitsComplementary to DRAQA24TDRC3124T in USSMini3 type package Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) USSMini3-F1-B Contributes to miniatu
drcqa24x.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRCQA24XSilicon NPN epitaxial planar typeFor digital circuitsComplementary to DRAQA24XDRC3124X in USSMini3 type package Features Package High forward current transfer ratio hFE Code Low collector-emitter saturation voltage VCE(sat) USSMini3-F1-B Contributes to miniaturization of sets, reduction o
drcqa52z.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRCQA52ZSilicon NPN epitaxial planar typeFor digital circuitsComplementary to DRAQA52ZDRC3152Z in USSMini3 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. USSMini3-F1-B Eco-friendly Halogen-
drcqa44t.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRCQA44TSilicon NPN epitaxial planar typeFor digital circuitsComplementary to DRAQA44TDRC3144T in USSMini3 type package Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) USSMini3-F1-B Contributes to miniatu
drcqa44e.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRCQA44ESilicon NPN epitaxial planar typeFor digital circuitsComplementary to DRAQA44EDRC3A44E in USSMini3 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. USSMini3-F1-B Eco-friendly Halogen-
drcqa15t.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRCQA15TSilicon NPN epitaxial planar typeFor digital circuitsComplementary to DRAQA15TDRC3115T in USSMini3 type package Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) USSMini3-F1-B Contributes to miniatu
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: 2N4029 | 2N399
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050