DTA113EM3T5G Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: DTA113EM3T5G

Código: 7E

Material: Si

Polaridad de transistor: Pre-Biased-PNP

Resistencia de Entrada Base R1 = 1 kOhm

Resistencia Base-Emisor R2 = 1 kOhm

Ratio típica de resistencia R1/R2 = 1

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.26 W

Tensión colector-base (Vcb): 50 V

Tensión colector-emisor (Vce): 50 V

Corriente del colector DC máxima (Ic): 0.1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hFE): 3

Encapsulados: SOT?723

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DTA113EM3T5G datasheet

 ..1. Size:110K  onsemi
 dta113ee dta113eet1g dta113em3 dta113em3t5g.pdf pdf_icon

DTA113EM3T5G

MUN2130, MMUN2130L, MUN5130, DTA113EE, DTA113EM3, NSBA113EF3 Digital Transistors (BRT) R1 = 1 kW, R2 = 1 kW www.onsemi.com PNP Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network PIN 3 COLLECTOR This series of digital transistors is designed to replace a single (OUTPUT) PIN 1 device and its external resistor bias network. The Bias Resistor R1 BASE Transistor (BRT)

 0.1. Size:110K  onsemi
 nsvdta113em3t5g.pdf pdf_icon

DTA113EM3T5G

MUN2130, MMUN2130L, MUN5130, DTA113EE, DTA113EM3, NSBA113EF3 Digital Transistors (BRT) R1 = 1 kW, R2 = 1 kW www.onsemi.com PNP Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network PIN 3 COLLECTOR This series of digital transistors is designed to replace a single (OUTPUT) PIN 1 device and its external resistor bias network. The Bias Resistor R1 BASE Transistor (BRT)

 5.1. Size:450K  onsemi
 mun2130 mmun2130l mun5130 dta113ee dta113em3 nsba113ef3.pdf pdf_icon

DTA113EM3T5G

MUN2130, MMUN2130L, MUN5130, DTA113EE, DTA113EM3, NSBA113EF3 Digital Transistors (BRT) R1 = 1 kW, R2 = 1 kW www.onsemi.com PNP Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network PIN 3 COLLECTOR This series of digital transistors is designed to replace a single (OUTPUT) PIN 1 device and its external resistor bias network. The Bias Resistor R1 BASE Transistor (BRT)

 7.1. Size:113K  philips
 pdta113e ser.pdf pdf_icon

DTA113EM3T5G

PDTA113E series PNP resistor-equipped transistors; R1 = 1 k , R2 = 1 k Rev. 05 2 September 2009 Product data sheet 1. Product profile 1.1 General description PNP Resistor-Equipped Transistors (RET). Table 1. Product overview Type number Package NPN complement NXP JEITA JEDEC PDTA113EE SOT416 SC-75 - PDTC113EE PDTA113EK SOT346 SC-59A TO-236 PDTC113EK PDTA113EM SOT883 SC-101

MOSTRAR MÁS

Otros transistores... DTA043XM, DTA043XUB, DTA044TEB, DTA044TM, DTA044TUB, DTA113EE, DTA113EET1G, DTA113EM3, 2N3055, DTA113TKA, DTA113ZEFRA, DTA113ZKAFRA, DTA113ZUAFRA, DTA113ZVA, DTA114EA3, DTA114EB3, DTA114EEFRA