DTA114TET1G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: DTA114TET1G
Código: 6E
Material: Si
Polaridad de transistor: Pre-Biased-PNP
Resistencia de Entrada Base R1 = 10 kOhm
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.2 W
Tensión colector-base (Vcb): 50 V
Tensión colector-emisor (Vce): 50 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 250 MHz
Ganancia de corriente contínua (hfe): 160
Paquete / Cubierta: SC-75
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DTA114TET1G Datasheet (PDF)
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DTA114EET1 Series,SDTA114EET1 SeriesPreferred DevicesBias Resistor TransistorsPNP Silicon Surface Mount Transistorswith Monolithic Bias Resistor Networkhttp://onsemi.comThis new series of digital transistors is designed to replace a singledevice and its external resistor bias network. The Bias ResistorTransistor (BRT) contains a single transistor with a monolithic bias PNP SIL
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LESHAN RADIO COMPANY, LTD.Bias Resistor TransistorsLDTC114EET1G SeriesS-LDTC114EET1G SeriesNPN Silicon Surface Mount Transistorswith Monolithic Bias Resistor NetworkThis new series of digital transistors is designed to replace a singledevice and its external resistor bias network. The BRT (Bias ResistorTransistor) contains a single transistor with a monolithic bias networkcons
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LESHAN RADIO COMPANY, LTD.Bias Resistor TransistorsLDTA114EET1G SeriesPNP Silicon Surface Mount Transistorswith Monolithic Bias Resistor NetworkThis new series of digital transistors is designed to replace a singledevice and its external resistor bias network. The BRT (Bias ResistorTransistor) contains a single transistor with a monolithic bias networkconsisting of two resistors
pdta114te sot416.pdf
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DISCRETE SEMICONDUCTORSDATA SHEETM3D173PDTA114TEPNP resistor-equipped transistorPreliminary specification 1998 Jul 23Supersedes data of 1997 Jul 14File under Discrete Semiconductors, SC04Philips Semiconductors Preliminary specificationPNP resistor-equipped transistor PDTA114TEFEATURES Built-in bias resistor R1 (typ. 10 k) Simplification of circuit design R
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DISCRETE SEMICONDUCTORSDATA SHEETM3D173PDTA114TEPNP resistor-equipped transistorPreliminary specification 1998 Jul 23Supersedes data of 1997 Jul 14File under Discrete Semiconductors, SC04Philips Semiconductors Preliminary specificationPNP resistor-equipped transistor PDTA114TEFEATURES Built-in bias resistor R1 (typ. 10 k) Simplification of circuit design R
pdta114te 2.pdf
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DISCRETE SEMICONDUCTORSDATA SHEETM3D173PDTA114TEPNP resistor-equipped transistorPreliminary specification 1998 Jul 23Supersedes data of 1997 Jul 14File under Discrete Semiconductors, SC04Philips Semiconductors Preliminary specificationPNP resistor-equipped transistor PDTA114TEFEATURES Built-in bias resistor R1 (typ. 10 k) Simplification of circuit design R
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DTA114T seriesDatasheetPNP -100mA -50V Digital Transistors (Bias Resistor Built-in Transistors)lOutlinelParameter Value VMT3 EMT3FVCEO-50VIC-100mA R110kDTA114TM DTA114TEB(SC-105AA) (SC-89) EMT3 UMT3FlFeaturesl1) Built-In Biasing Resistor 2) Built-in bias resistors enable the configuration of DTA114TE DTA114TUB
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TransistorsDigital transistors (built in resistor)DTA114TE / DTA114TUA / DTA114TKA /DTA114TSAFFeatures FExternal dimensions (Units: mm)1) Built-in circuit enables the configu-ration of an inverter circuit withoutconnecting external input resistors(see equivalent circuit).2) The bias resistors consist of thin-film resistors with complete isola-tion to allow positive biasing
dta114te-tua-tka 94 sot416 323 346.pdf
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TransistorsDigital transistors (built in resistor)DTA114TE / DTA114TUA / DTA114TKA /DTA114TSAFFeatures FExternal dimensions (Units: mm)1) Built-in circuit enables the configu-ration of an inverter circuit withoutconnecting external input resistors(see equivalent circuit).2) The bias resistors consist of thin-film resistors with complete isola-tion to allow positive biasing
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DDTA (R1-ONLY SERIES) EDDTA (R1-ONLY SERIES) E PNP PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features A Epitaxial Planar Die Construction Complementary NPN Types Available (DDTC) C Built-In Biasing Resistor, R1 only SOT-523 Lead Free/RoHS Compliant (Note 2) B CTOP VIEW "Green" Device (Note 3 and 4) Dim Min Max Typ B E A 0.15 0.30 0.22Mecha
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MCCTM Micro Commercial Components20736 Marilla Street Chatsworth DTA114TEMicro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) Epoxy meets UL 94 V-0 flammability ratingPNP Digital Transistor Moisure Sensitivity Level 1 Built-in b
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DTA114TE/DTA114TUA/DTA114TKA/DTA114TSA/DTA114TCA TRANSISTOR(PNP) FEATURES Built-in bias resistors enable the configuration of an inverter circuit without connecting ex temal input resistors. The bias resistors conisit of thin-film resistors with complete isolation to allow positive biasing of the input. They also have the advantage of almost completely Eliminating parasi
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FM120-M WILLASDTA114TE THRUPNP Digital Transistor FM1200-M1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProduPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123H Low profile surface mounted application in order to optimize board space
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CHENMKO ENTERPRISE CO.,LTDCHDTA114TEGPSURFACE MOUNT PNP Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 100 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SC-75/SOT-416) SC-75/SOT-416* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.0.10.20.05* H
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