DTA123EET1G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: DTA123EET1G
Código: 6H
Material: Si
Polaridad de transistor: Pre-Biased-PNP
Resistencia de Entrada Base R1 = 2.2 kOhm
Resistencia Base-Emisor R2 = 2.2 kOhm
Ratio típica de resistencia R1/R2 = 1
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.2 W
Tensión colector-base (Vcb): 50 V
Tensión colector-emisor (Vce): 50 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 8
Paquete / Cubierta: SC-75
Búsqueda de reemplazo de transistor bipolar DTA123EET1G
DTA123EET1G Datasheet (PDF)
dta114eet1g dta114tet1g dta114yet1g dta115eet1g dta123eet1g dta123jet1g dta124eet1g dta124xet1g.pdf
DTA114EET1 Series,SDTA114EET1 SeriesPreferred DevicesBias Resistor TransistorsPNP Silicon Surface Mount Transistorswith Monolithic Bias Resistor Networkhttp://onsemi.comThis new series of digital transistors is designed to replace a singledevice and its external resistor bias network. The Bias ResistorTransistor (BRT) contains a single transistor with a monolithic bias PNP SIL
ldta114eet1g ldta124eet1g ldta144eet1g ldta114yet1g ldta114tet1g ldta143tet1g ldta123eet1g ldta143eet1g ldta143zet1g ldta124xet1g ldta123jet1g ldta115eet1g ldta144wet1g.pdf
LESHAN RADIO COMPANY, LTD.Bias Resistor TransistorsLDTA114EET1G SeriesPNP Silicon Surface Mount Transistorswith Monolithic Bias Resistor NetworkThis new series of digital transistors is designed to replace a singledevice and its external resistor bias network. The BRT (Bias ResistorTransistor) contains a single transistor with a monolithic bias networkconsisting of two resistors
pdta123ee pdta123eef pdta123ek pdta123em pdta123es pdta123et pdta123eu.pdf
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain
pdta123eef pdta123ek pdta123es.pdf
DISCRETE SEMICONDUCTORS DATA SHEETPDTA123E seriesPNP resistor-equipped transistors; R1 = 2.2 k, R2 = 2.2 kProduct data sheet 2004 Aug 02Supersedes data of 2004 Apr 07NXP Semiconductors Product data sheetPNP resistor-equipped transistors; PDTA123E seriesR1 = 2.2 k, R2 = 2.2 kFEATURES QUICK REFERENCE DATA Built-in bias resistorsSYMBOL PARAMETER TYP. MAX. UNI
dta123eefra dta123ekafra dta123emfha dta123euafra.pdf
DTA123E seriesDatasheetPNP -100mA -50V Digital Transistors (Bias Resistor Built-in Transistors)AEC-Q101 QualifiedlOutlinelParameter ValueVMT3 EMT3VCC-50VIC(MAX.)-100mA R12.2kDTA123EM DTA123EEDTA123EMFHA DTA123EEFRAR2 (SC-105AA) SOT-416(SC-75A)2.2kUMT3 SMT3lFeaturesl1) Built-In Biasing Resistors, R1 = R2 = 2.2k 2
dta123ee.pdf
DTA123E seriesDatasheetPNP -100mA -50V Digital Transistors (Bias Resistor Built-in Transistors)Outline VMT3 EMT3Parameter ValueOUTOUTVCC50VININIC(MAX.) GND100mA GNDR12.2kDTA123EM DTA123EER22.2k (SC-105AA) SOT-416 (SC-75A) UMT3 SMT3OUTOUTFeaturesIN1) Built-In Biasing Resistors, R1 = R2 = 2.2k.INGNDGND2) Built-in bias re
dta123ee-eua-eka 12sot416 323 346 dta123eka dta123esa.pdf
TransistorsDigital transistors (built-in resistors)DTA123EE / DTA123EUA / DTA123EKA /DTA123ESAFFeatures FExternal dimensions (Units: mm)1) Built-in bias resistors enable theconfiguration of an inverter circuitwithout connecting external inputresistors (see equivalent circuit).2) The bias resistors consist of thin-film resistors with complete isola-tion to allow positive bi
ddta123ee.pdf
DDTA (R1 = R2 SERIES) EDDTA (R1 = R2 SERIES) E PNP PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction A SOT-523 Complementary NPN Types Available (DDTC) Dim Min Max Typ Built-In Biasing Resistors, R1 = R2 A 0.15 0.30 0.22 Lead Free/RoHS Compliant (Note 2) TOP VIEW B C B 0.75 0.85 0.80 "Green" Device (Note 3 and 4)
chdta123eegp.pdf
CHENMKO ENTERPRISE CO.,LTDCHDTA123EEGPSURFACE MOUNT PNP Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 100 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SC-75/SOT416) SC-75/SOT-416* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation cu
Otros transistores... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050