DTA123EUAFRA Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: DTA123EUAFRA

Código: 12

Material: Si

Polaridad de transistor: Pre-Biased-PNP

Resistencia de Entrada Base R1 = 2.2 kOhm

Resistencia Base-Emisor R2 = 2.2 kOhm

Ratio típica de resistencia R1/R2 = 1

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.2 W

Tensión colector-emisor (Vce): 50 V

Tensión emisor-base (Veb): 10 V

Corriente del colector DC máxima (Ic): 0.1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 250 MHz

Ganancia de corriente contínua (hFE): 20

Encapsulados: SOT-323

 Búsqueda de reemplazo de DTA123EUAFRA

- Selecciónⓘ de transistores por parámetros

 

DTA123EUAFRA datasheet

 ..1. Size:2081K  rohm
dta123eefra dta123ekafra dta123emfha dta123euafra.pdf pdf_icon

DTA123EUAFRA

DTA123E series Datasheet PNP -100mA -50V Digital Transistors (Bias Resistor Built-in Transistors) AEC-Q101 Qualified lOutline l Parameter Value VMT3 EMT3 VCC -50V IC(MAX.) -100mA R1 2.2k DTA123EM DTA123EE DTA123EMFHA DTA123EEFRA R2 (SC-105AA) SOT-416(SC-75A) 2.2k UMT3 SMT3 lFeatures l 1) Built-In Biasing Resistors, R1 = R2 = 2.2k 2

 5.1. Size:175K  diodes
ddta123eua.pdf pdf_icon

DTA123EUAFRA

DDTA (R1 = R2 SERIES) UA PNP PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features A Epitaxial Planar Die Construction SOT-323 Complementary NPN Types Available (DDTC) Dim Min Max Built-In Biasing Resistors, R1 = R2 A 0.25 0.40 Lead Free/RoHS Compliant (Note 2) B C B 1.15 1.35 "Green" Device, Note 3 and 4 C 2.00 2.20 Mechanical Data D 0.65 N

 6.1. Size:416K  nxp
pdta123ee pdta123eef pdta123ek pdta123em pdta123es pdta123et pdta123eu.pdf pdf_icon

DTA123EUAFRA

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

 6.2. Size:140K  chenmko
chdta123eugp.pdf pdf_icon

DTA123EUAFRA

CHENMKO ENTERPRISE CO.,LTD CHDTA123EUGP SURFACE MOUNT PNP Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 100 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. (SC-70/SOT323) SC-70/SOT-323 * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation. * High saturation cu

Otros transistores... DTA115TM3, DTA115TM3T5G, DTA123EEFRA, DTA123EET1G, DTA123EKAFRA, DTA123EM3, DTA123EM3T5G, DTA123EMFHA, D880, DTA123JC3, DTA123JEFRA, DTA123JET1G, DTA123JKAFRA, DTA123JM3, DTA123JM3T5G, DTA123JMFHA, DTA123JS3