2SA1008 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

DATA SHEET SILICON POWER TRANSISTOR 2SA1008 PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1008 is a mold power transistor developed for high-speed ORDERING INFORMATION switching, and is ideal for use as a driver in devices such as switching Part No. Package regulators, DC/DC converters, and high-frequency power amplifiers. 2SA1008 TO-220AB FEATURES (TO-220AB)

JMnic Product Specification Silicon PNP Power Transistors 2SA1008 DESCRIPTION With TO-220 package Complement to type 2SC2331 Low collector saturation voltage Fast switching speed APPLICATIONS Switching regulators DC/DC converters High frequency power amplifiers PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplifie

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1008 DESCRIPTION Low Collector Saturation Voltage- V = -0.6V(Max.)@ I = -1A CE(sat) C Fast Switching Speed Complement to Type 2SC2331 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use as a driver in devices such as switching regulators, DC/DC converte

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JMnic Product Specification Silicon PNP Power Transistors 2SA1006 2SA1006A 2SA1006B DESCRIPTION With TO-220 package Complement to type 2SC2336, 2SC2336A,2SC2336B APPLICATIONS Audio frequency power amplifier High frequency power amplifier PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol 3

isc Silicon PNP Power Transistor 2SA1007 DESCRIPTION High Current Capability Collector-Emitter Breakdown Voltage- V = -150V(Min.) (BR)CEO Complement to Type 2SC2337 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALU

isc Silicon PNP Power Transistor 2SA1003 DESCRIPTION High Current Capability Collector-Emitter Breakdown Voltage- V = -150V(Min.) (BR)CEO Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Volta

isc Silicon PNP Power Transistor 2SA1006A DESCRIPTION Good Linearity of h FE High Collector-Emitter Breakdown Voltage- V = -200V(Min) (BR)CEO Wide Area of Safe Operation Complement to Type 2SC2336A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Adudio frequency power amplifier High frequency power amplifier ABSOLUTE

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1006B DESCRIPTION Good Linearity of h FE High Collector-Emitter Breakdown Voltage- V = -250Vdc (Min) (BR)CEO Wide Area of Safe Operation Complement to Type 2SC2336B Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Adudio frequency power amplifier High frequency p

isc Silicon PNP Power Transistor 2SA1009 DESCRIPTION Low Collector Saturation Voltage- VCE(sat)= -1V(Max.)@ IC= -0.3A Fast Switching Speed Wide Reverse Bias Safe Operating Area 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulators, DC/DC converters and High frequency power

isc Silicon PNP Power Transistor 2SA1009A DESCRIPTION Low Collector Saturation Voltage- VCE(sat)= -1V(Max.)@ IC= -0.3A Fast Switching Speed Wide Reverse Bias Safe Operating Area Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulators, DC/DC converters and High frequency power amplifier application.

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1006 2SA1006A 2SA1006B DESCRIPTION With TO-220 package Complement to type 2SC2336, 2SC2336A,2SC2336B APPLICATIONS Audio frequency power amplifier High frequency power amplifier PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-22

isc Silicon PNP Power Transistor 2SA1001 DESCRIPTION High Current Capability Collector-Emitter Breakdown Voltage- V = -130V(Min.) (BR)CEO Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Volta

isc Silicon PNP Power Transistor 2SA1002 DESCRIPTION High Current Capability Collector-Emitter Breakdown Voltage- V = -120V(Min.) (BR)CEO Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Volta