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DTA123JS3 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: DTA123JS3
   Código: 6M
   Material: Si
   Polaridad de transistor: Pre-Biased-PNP
   Resistencia de Entrada Base R1 = 2.2 kOhm
   Resistencia Base-Emisor R2 = 47 kOhm
   Ratio típica de resistencia R1/R2 = 0.047

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.2 W
   Tensión colector-emisor (Vce): 50 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 250 MHz
   Ganancia de corriente contínua (hfe): 80
   Paquete / Cubierta: SOT-323
 

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DTA123JS3 Datasheet (PDF)

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DTA123JS3

Spec. No. : C261S3 Issued Date : 2003.07.21 CYStech Electronics Corp. Revised Date : Page No. : 1/3 PNP Digital Transistors (Built-in Resistors) DTA123JS3 Features Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). The bias resistors consist of thin-film resistors with complet

 6.1. Size:68K  rohm
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DTA123JS3

TransistorsDigital transistors (built-in resistors)DTA123JE / DTA123JUA / DTA123JKA /DTA123JSAFFeatures FExternal dimensions (Units: mm)1) Built-in bias resistors enable theconfiguration of an inverter circuitwithout connecting external inputresistors (see equivalent circuit).2) The bias resistors consist of thin-film resistors with complete isola-tion to allow positive bi

 6.2. Size:544K  htsemi
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DTA123JS3

DTA123JKA/DTA123JCA/DTA123JSA DTA123JE/DTA123JUA/ TRANSISTOR(PNP)Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors(see equivalent circuit). 2) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input. They also have the advantage of almost complet

 7.1. Size:54K  motorola
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DTA123JS3

DISCRETE SEMICONDUCTORSDATA SHEETM3D425PDTA123JEFPNP resistor-equipped transistor1999 Apr 20Preliminary specificationPhilips Semiconductors Preliminary specificationPNP resistor-equipped transistor PDTA123JEFFEATURES Built-in bias resistors R1 and R2(typ. 2.2 k and 47 krespectively)3handbook, halfpage3 Simplification of circuit designR11 Red

Otros transistores... DTA123EUAFRA , DTA123JC3 , DTA123JEFRA , DTA123JET1G , DTA123JKAFRA , DTA123JM3 , DTA123JM3T5G , DTA123JMFHA , TIP2955 , DTA123JUAFRA , DTA123TE , DTA123TET1G , DTA123TM3 , DTA123TM3T5G , DTA123TN3 , DTA123YC3 , DTA123YEFRA .

 

 
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