DTA143TET1G Todos los transistores

 ..1. Size:222K  onsemi
 dta143eet1g dta143tet1g dta143zet1g dta144eet1g dta144wet1g.pdf

DTA114EET1 Series, SDTA114EET1 Series Preferred Devices Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network http //onsemi.com This new series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias PNP SIL

 0.1. Size:768K  lrc
 ldta114eet1g ldta124eet1g ldta144eet1g ldta114yet1g ldta114tet1g ldta143tet1g ldta123eet1g ldta143eet1g ldta143zet1g ldta124xet1g ldta123jet1g ldta115eet1g ldta144wet1g.pdf

LESHAN RADIO COMPANY, LTD. Bias Resistor Transistors LDTA114EET1G Series PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors

 6.1. Size:130K  nxp
 pdta143tef pdta143tk pdta143ts.pdf

DISCRETE SEMICONDUCTORS DATA SHEET PDTA143T series PNP resistor-equipped transistors; R1 = 4.7 k , R2 = open Product data sheet 2004 Aug 04 Supersedes data of 2003 Sep 08 NXP Semiconductors Product data sheet PNP resistor-equipped transistors; PDTA143T series R1 = 4.7 k , R2 = open FEATURES QUICK REFERENCE DATA Built-in bias resistors SYMBOL PARAMETER TYP. MAX. UNIT

 6.2. Size:1419K  rohm
 dta143teb dta143tefra dta143tkafra dta143tmfha dta143tuafra dta143tub.pdf

DTA143T series Datasheet PNP -100mA -50V Digital Transistors (Bias Resistor Built-in Transistors) lOutline l Parameter Value VMT3 EMT3F VCEO -50V IC -100mA R1 4.7k DTA143TM DTA143TEB (SC-105AA) (SC-89) EMT3 UMT3F lFeatures l 1) Built-In Biasing Resistor 2) Built-in bias resistors enable the configuration of DTA143TE DTA143TUB

 6.3. Size:57K  rohm
 dta143te-tua-tka 93 sot416 323 346.pdf

Transistors Digital transistors (built in resistor) DTA143TE / DTA143TUA / DTA143TKA / DTA143TSA FFeatures FExternal dimensions (Units mm) 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin- film resistors with complete isola- tion to allow positive bia

 6.4. Size:57K  rohm
 dta143te.pdf

Transistors Digital transistors (built in resistor) DTA143TE / DTA143TUA / DTA143TKA / DTA143TSA FFeatures FExternal dimensions (Units mm) 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin- film resistors with complete isola- tion to allow positive bia

 6.5. Size:226K  diodes
 ddta113te ddta123te ddta143te ddta114te ddta124te ddta144te ddta115te ddta125te.pdf

DDTA (R1-ONLY SERIES) E DDTA (R1-ONLY SERIES) E PNP PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features A Epitaxial Planar Die Construction Complementary NPN Types Available (DDTC) C Built-In Biasing Resistor, R1 only SOT-523 Lead Free/RoHS Compliant (Note 2) B C TOP VIEW "Green" Device (Note 3 and 4) Dim Min Max Typ B E A 0.15 0.30 0.22 Mecha

 6.6. Size:2360K  htsemi
 dta143tca dta143te dta143tsa dta143tua.pdf

DTA143 TM/DTA143 TE/DTA143 TUA DTA143 TKA/DTA143 TSA/DTA143 TCA DIGITAL TRANSISTOR (PNP) Equivalent circuit FEATURES 1. Built-in bias resistors enable the configuration of an inverter circuit resistors(see equivalent circuit). without connecting external input 2. The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input.They a

 6.7. Size:124K  chenmko
 chdta143tegp.pdf

CHENMKO ENTERPRISE CO.,LTD CHDTA143TEGP SURFACE MOUNT PNP Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 100 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. (SC-75/SOT-416) SC-75/SOT-416 * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation. * High saturation c