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DTC114TET1G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: DTC114TET1G
   Código: 94
   Material: Si
   Polaridad de transistor: Pre-Biased-NPN
   Resistencia de Entrada Base R1 = 10 kOhm

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.2 W
   Tensión colector-base (Vcb): 50 V
   Tensión colector-emisor (Vce): 50 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 160
   Paquete / Cubierta: SOT-416

 Búsqueda de reemplazo de transistor bipolar DTC114TET1G

 

DTC114TET1G Datasheet (PDF)

 ..1. Size:144K  onsemi
dtc114eet1g dtc114tet1g dtc114yet1g dtc115eet1g dtc123eet1g.pdf

DTC114TET1G
DTC114TET1G

DTC114EET1 Series,SDTC114EET1 SeriesBias Resistor TransistorNPN Silicon Surface Mount Transistorwith Monolithic Bias Resistor NetworkThis new series of digital transistors is designed to replace a singlehttp://onsemi.comdevice and its external resistor bias network. The BRT (Bias ResistorTransistor) contains a single transistor with a monolithic bias networkconsisting of two r

 6.1. Size:51K  motorola
pdtc114te 2.pdf

DTC114TET1G
DTC114TET1G

DISCRETE SEMICONDUCTORSDATA SHEETM3D173PDTC114TENPN resistor-equipped transistor1998 Aug 03Product specificationSupersedes data of 1997 Jul 11File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC114TEFEATURES Built-in bias resistor R1 (typ. 10 k) Simplification of circuit design Reduces

 6.2. Size:61K  motorola
dtc114te 94 sot416.pdf

DTC114TET1G
DTC114TET1G

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby DTC114TE/DDTC114TEPreliminary Data SheetBias Resistor TransistorNPN Silicon Surface Mount Transistor with3Monolithic Bias Resistor NetworkThe BRT (Bias Resistor Transistor) contains a single transistor with a21monolithic bias network consisting of two resistors; a series base resistor and abaseemitter resis

 6.3. Size:91K  motorola
dtc114terev0.pdf

DTC114TET1G
DTC114TET1G

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby DTC114TE/DDTC114TEPreliminary Data SheetBias Resistor TransistorNPN Silicon Surface Mount Transistor with3Monolithic Bias Resistor NetworkThe BRT (Bias Resistor Transistor) contains a single transistor with a21monolithic bias network consisting of two resistors; a series base resistor and abaseemitter resis

 6.4. Size:51K  philips
pdtc114te 2.pdf

DTC114TET1G
DTC114TET1G

DISCRETE SEMICONDUCTORSDATA SHEETM3D173PDTC114TENPN resistor-equipped transistor1998 Aug 03Product specificationSupersedes data of 1997 Jul 11File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC114TEFEATURES Built-in bias resistor R1 (typ. 10 k) Simplification of circuit design Reduces

 6.5. Size:1451K  rohm
dtc114tefra.pdf

DTC114TET1G
DTC114TET1G

DTC114T seriesDatasheetNPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors)lOutlinelParameter Value VMT3 EMT3FVCEO50VIC100mA R110kDTC114TM DTC114TEB(SC-105AA) (SC-89) EMT3 UMT3FlFeaturesl1) Built-In Biasing Resistor 2) Built-in bias resistors enable the configuration of DTC114TE DTC114TUB

 6.6. Size:1451K  rohm
dtc114teb dtc114tkafra dtc114tmfha dtc114tub.pdf

DTC114TET1G
DTC114TET1G

DTC114T seriesDatasheetNPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors)lOutlinelParameter Value VMT3 EMT3FVCEO50VIC100mA R110kDTC114TM DTC114TEB(SC-105AA) (SC-89) EMT3 UMT3FlFeaturesl1) Built-In Biasing Resistor 2) Built-in bias resistors enable the configuration of DTC114TE DTC114TUB

 6.7. Size:58K  rohm
dtc114te-tua-tka-tca 04 sot416 323 346 23.pdf

DTC114TET1G
DTC114TET1G

TransistorsDigital transistors (built in resistor)DTC114TE / DTC114TUA / DTC114TKADTC114TCA / DTC114TSAFFeatures FExternal dimensions (Units: mm)1) Built-in bias resistors enable theconfiguration of an inverter circuitwithout connecting external inputresistors (see equivalent circuit).2) The bias resistors consist of thin-film resistors with complete isola-tion to allow ne

 6.8. Size:58K  rohm
dtc114te.pdf

DTC114TET1G
DTC114TET1G

TransistorsDigital transistors (built in resistor)DTC114TE / DTC114TUA / DTC114TKADTC114TCA / DTC114TSAFFeatures FExternal dimensions (Units: mm)1) Built-in bias resistors enable theconfiguration of an inverter circuitwithout connecting external inputresistors (see equivalent circuit).2) The bias resistors consist of thin-film resistors with complete isola-tion to allow ne

 6.9. Size:92K  diodes
ddtc114te.pdf

DTC114TET1G
DTC114TET1G

DDTC (R1-ONLY SERIES) ENPN PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Mechanical Data Epitaxial Planar Die Construction Case: SOT523 Complementary PNP Types Available (DDTA) Case Material: Molded Plastic, Green Molding Compound (Notes 2 & 3). UL Flammability Classification Rating 94V-0 Built-In Biasing Resistor, R1 only Moisture Sensitiv

 6.10. Size:206K  mcc
dtc114te sot-523.pdf

DTC114TET1G
DTC114TET1G

MCCTM Micro Commercial Components20736 Marilla Street ChatsworthMicro Commercial ComponentsDTC114TECA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) Epoxy meets UL 94 V-0 flammability rating Moisure Sensitivity Level 1NPN Digital Transistor Built-in

 6.11. Size:2802K  jiangsu
dtc114tm dtc114te dtc114tua dtc114tka dtc114tca dtc114tsa.pdf

DTC114TET1G
DTC114TET1G

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD Digital Transistors (Built-in Resistors) DTC114TM/DTC114TE/DTC114TUADTC114TKA /DTC114TCA/DTC114TSA Equivalent CircuitDIGITAL TRANSISTOR (NPN) FEATURES Built-in bias resistors enable the configuration of an inverter circuitwithout connecting external input resistors(see equivalent circuit) The bias resistors consist of t

 6.12. Size:294K  willas
dtc114te.pdf

DTC114TET1G
DTC114TET1G

FM120-M WILLASDTC114TE THRUNPN Digital Transistor FM1200-M1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProducPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123H Low profile surface mounted application in order to optimize board spac

 6.13. Size:84K  chenmko
chdtc114tegp.pdf

DTC114TET1G
DTC114TET1G

CHENMKO ENTERPRISE CO.,LTDCHDTC114TEGPSURFACE MOUNT NPN Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 100 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SC-75/SOT-416) SC-75/SOT-416* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation c

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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