DTC114WN3 Todos los transistores

 

DTC114WN3 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: DTC114WN3
   Código: 8W
   Material: Si
   Polaridad de transistor: Pre-Biased-NPN
   Resistencia de Entrada Base R1 = 10 kOhm
   Resistencia Base-Emisor R2 = 4.7 kOhm
   Ratio típica de resistencia R1/R2 = 2.1

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.2 W
   Tensión colector-emisor (Vce): 50 V
   Tensión emisor-base (Veb): 10 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 250 MHz
   Ganancia de corriente contínua (hfe): 24
   Paquete / Cubierta: SOT-23

 Búsqueda de reemplazo de transistor bipolar DTC114WN3

 

DTC114WN3 Datasheet (PDF)

 ..1. Size:151K  cystek
dtc114wn3.pdf

DTC114WN3
DTC114WN3

Spec. No. : C354N3 Issued Date : 2003.06.25 CYStech Electronics Corp. Revised Date : Page No. : 1/4 NPN Digital Transistors (Built-in Resistors) DTC114WN3 Features Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). The bias resistors consist of thin-film resistors with complet

 7.1. Size:141K  rohm
dtc114w-ser dtc114we.pdf

DTC114WN3
DTC114WN3

100mA / 50V Digital transistors (with built-in resistors) DTC114WE / DTC114WUA / DTC114WKA Applications Dimensions (Unit : mm) Inverter, Interface, Driver EMT3(SC-75A) 1.6 0.70.550.3 Features 1)Built-in bias resistors enable the configuration of an inverter ( )3circuit without connecting external input resistors. 2)The bias resistors consist o

 7.2. Size:237K  diodes
ddtc114we.pdf

DTC114WN3
DTC114WN3

DDTC (R1 R2 SERIES) E NPN PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction ASOT-523 Complementary PNP Types Available (DDTA) Built-In Biasing Resistors, R1R2 Dim Min Max Typ Lead Free/RoHS Compliant (Note 2) B C A 0.15 0.30 0.22TOP VIEW "Green" Device (Note 3 and 4) B 0.75 0.85 0.80C 1.45 1.75 1.60

 7.3. Size:93K  diodes
ddtc114wca.pdf

DTC114WN3
DTC114WN3

DDTC (R1R2 SERIES) CANPN PRE-BIASED SMALL SIGNAL SOT23 SURFACE MOUNT TRANSISTOR Product Summary Features and Benefits Epitaxial Planar Die Construction Part Number R1 (NOM) R2 (NOM) Complementary PNP Types Available (DDTA) DDTC113ZCA 1K 10K Built-In Biasing Resistors, R1R2 DDTC123YCA 2.2K 10K Lead Free, RoHS Compliant (Note 1) DDTC123JCA

 7.4. Size:203K  diodes
ddtc114wua.pdf

DTC114WN3
DTC114WN3

DDTC (R1R2 SERIES) UA NPN PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction SOT-323 A Complementary PNP Types Available (DDTA) Dim Min Max Built-In Biasing Resistors, R1R2 A 0.25 0.40 Lead Free/RoHS Compliant (Note 1) B 1.15 1.35 B C "Green" Device (Note 2 & 3) C 2.00 2.20 Mechanical Data D 0.65 No

 7.5. Size:204K  diodes
ddtc114wka.pdf

DTC114WN3
DTC114WN3

DDTC (R1R2 SERIES) KA NPN PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction Complementary PNP Types Available (DDTA) A Built-In Biasing Resistors, R1R2 SC-59 Lead Free/RoHS Compliant (Note 1) Dim Min Max "Green" Device, Note 2 and 3 B CA 0.35 0.50 B 1.50 1.70 Mechanical Data C 2.70 3.00 G Case:

 7.6. Size:381K  secos
dtc114wseries.pdf

DTC114WN3
DTC114WN3

DTC114WE/DTC114WUA/DTC114WKADTC114WCA/TC114WSAElektronische BauelementeNPN Digital Transistors (Built-in Resistors)FEATURES* Built-in bias resistors enable the configuration ofan inverter circuit without connecting input resistors(see equivalent circuit).* Only the on/off confitions need to be set for operation,making device design easy.* The bias resistors consis of thin-fi

 7.7. Size:324K  secos
dtc114wca dtc114wka dtc114wua.pdf

DTC114WN3
DTC114WN3

DTC114WE/DTC114WUA/DTC114WKADTC114WCA/TC114WSAElektronische BauelementeNPN Digital Transistors (Built-in Resistors)FEATURES* Built-in bias resistors enable the configuration ofan inverter circuit without connecting input resistors(see equivalent circuit).* Only the on/off confitions need to be set for operation,making device design easy.* The bias resistors consis of thin-fi

 7.8. Size:125K  taiwansemi
dtc114wm.pdf

DTC114WN3
DTC114WN3

DTC114 WM/WE/WUA/WCA/WSANPN Small Signal TransistorSmall Signal DiodeFeatures Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistor (see equivalent circuit). The bias resistors consist of thin -film resistors with complete isolation to allow negative biasing of the input. They also have the advantage of almost comple

 7.9. Size:520K  jiangsu
dtc114w.pdf

DTC114WN3
DTC114WN3

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD Digital Transistors (Built-in Resistors) DTC114WM/DTC114WE/DTC114WUA DTC114WKA /DTC114WCA/DTC114WSA Equivalent Circuit DIGITAL TRANSISTOR (NPN) FEATURES Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors(see equivalent circuit) The bias resistors consis

 7.10. Size:105K  lge
dtc114w.pdf

DTC114WN3
DTC114WN3

DTC114WE/DTC114WUA/DTC114WCADTC114WKA/DTC114WSADigital Transistor(NPN)Features1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. They also have the advantage of almost co

 7.11. Size:146K  cystek
dtc114ws3.pdf

DTC114WN3
DTC114WN3

Spec. No. : C354S3 Issued Date : 2002.06.01 CYStech Electronics Corp.Revised Date : 2002.11.04 Page No. : 1/4 General Purpose NPN Digital Transistors (Built-in Resistors) DTC114WS3 Features Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). The bias resistors consist of thin-f

 7.12. Size:420K  lrc
ldtc114wet1g.pdf

DTC114WN3

 7.13. Size:60K  chenmko
chdtc114wkgp.pdf

DTC114WN3
DTC114WN3

CHENMKO ENTERPRISE CO.,LTDCHDTC114WKGPSURFACE MOUNT NPN Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 100 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SOT-23) SOT-23* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation current capabil

 7.14. Size:92K  chenmko
chdtc114wegp.pdf

DTC114WN3
DTC114WN3

CHENMKO ENTERPRISE CO.,LTDCHDTC114WEGPSURFACE MOUNT NPN Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 100 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SC-75/SOT416) SC-75/SOT-416* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation cu

 7.15. Size:71K  chenmko
chdtc114wugp.pdf

DTC114WN3
DTC114WN3

CHENMKO ENTERPRISE CO.,LTDCHDTC114WUGPSURFACE MOUNT NPN Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 100 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURESC-70/SOT-323* Small surface mounting type. (SC-70/SOT323)* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation c

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