DTC114YMFHA . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: DTC114YMFHA
   Código: 64
   Material: Si
   Polaridad de transistor: Pre-Biased-NPN
   Resistencia de Entrada Base R1 = 10 kOhm
   Resistencia Base-Emisor R2 = 47 kOhm
   Ratio típica de resistencia R1/R2 = 0.21

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 0.15 W
   Tensión colector-emisor (Vce): 50 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 0.07 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Transición de frecuencia (ft): 250 MHz
   Ganancia de corriente contínua (hfe): 68
   Paquete / Cubierta: SC-105AA

Búsqueda de reemplazo de transistor bipolar DTC114YMFHA

DTC114YMFHA Datasheet (PDF)

..1. Size:1523K rohm
dtc114yefra dtc114ykafra dtc114ymfha dtc114yuafra.pdf

DTC114Y seriesDatasheetNPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors)lOutlinelParameter Value VMT3 EMT3FVCC50VIC(MAX.)100mA R110kDTC114YM DTC114YEBR2 (SC-105AA) (SC-89)47k EMT3 UMT3FlFeaturesl1) Built-In Biasing Resistors 2) Built-in bias resistors enable the configuration of DTC114YE DTC114Y

6.1. Size:156K onsemi
dtc114ym3.pdf

MUN2214, MMUN2214L,MUN5214, DTC114YE,DTC114YM3, NSBC114YF3Digital Transistors (BRT)R1 = 10 kW, R2 = 47 kWhttp://onsemi.comNPN Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkPIN 3COLLECTORThis series of digital transistors is designed to replace a single(OUTPUT)PIN 1device and its external resistor bias network. The Bias Resistor R1BASETransistor (

6.2. Size:135K onsemi
mun2214 mmun2214l mun5214 dtc114ye dtc114ym3 nsbc114yf3.pdf

MUN2214, MMUN2214L,MUN5214, DTC114YE,DTC114YM3, NSBC114YF3Digital Transistors (BRT)R1 = 10 kW, R2 = 47 kWwww.onsemi.comNPN Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkPIN 3COLLECTORThis series of digital transistors is designed to replace a single(OUTPUT)PIN 1device and its external resistor bias network. The Bias Resistor R1BASETransistor (BRT

6.3. Size:156K onsemi
nsvdtc114ym3t5g.pdf

6.4. Size:82K onsemi
dtc114em3t5g dtc114tm3t5g dtc114ym3t5g dtc123em3t5g.pdf

DTC114EM3T5G SeriesDigital Transistors (BRT)NPN Silicon Surface Mount Transistorswith Monolithic Bias Resistor NetworkThis new series of digital transistors is designed to replace a singledevice and its external resistor bias network. The digital transistorhttp://onsemi.comcontains a single transistor with a monolithic bias network consistingof two resistors; a series base resis

6.5. Size:545K lrc
ldtc114em3t5g ldtc124em3t5g ldtc144em3t5g ldtc114ym3t5g ldtc114tm3t5g ldtc143tm3t5g ldtc123em3t5g ldtc143em3t5g ldtc143zm3t5g ldtc124xm3t5g ldtc123jm3t5g ldtc115em3t5g ldtc144wm3t5g ldtc144tm3t5g.pdf

LESHAN RADIO COMPANY, LTD.Bias Resistor TransistorsNPN Silicon Surface Mount TransistorsSeriesLDTC114EM3T5GLDTC114EM3T5GS-LDTC114EM3T5G SeriesWith Monolithic Bias Resistor NetworkThis new series of digital transistors is designed to replace a singledevice and its external resistor bias network. The BRT (Bias ResistorTransistor) contains a single transistor with a monolithic

6.6. Size:545K lrc
ldtc114em3t5g ldtc124em3t5g ldtc144em3t5g ldtc114ym3t5g ldtc114tm3t5g ldtc143tm3t5g ldtc123em3t5g.pdf