DTC123YN3 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: DTC123YN3
Código: 8Y
Material: Si
Polaridad de transistor: Pre-Biased-NPN
Resistencia de Entrada Base R1 = 2.2 kOhm
Resistencia Base-Emisor R2 = 10 kOhm
Ratio típica de resistencia R1/R2 = 0.22
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.2 W
Tensión colector-emisor (Vce): 50 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 250 MHz
Ganancia de corriente contínua (hFE): 33
Encapsulados: SOT-23
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DTC123YN3 datasheet
..1. Size:355K cystek
dtc123yn3.pdf 
Spec. No. C362N3 Issued Date 2002.08.16 CYStech Electronics Corp. Revised Date 2014.09.17 Page No. 1/6 NPN Digital Transistors (Built-in Resistors) DTC123YN3 Features Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). The bias resistors consist of thin-film resistors wi
7.1. Size:137K nxp
pdtc123yk pdtc123ys.pdf
PDTC123Y series NPN resistor-equipped transistors; R1 = 2.2 k , R2 = 10 k Rev. 04 16 November 2009 Product data sheet 1. Product profile 1.1 General description NPN Resistor-Equipped Transistors (RET) family. Table 1. Product overview Type number Package PNP complement NXP JEITA JEDEC PDTC123YE SOT416 SC-75 - PDTA123YE PDTC123YK SOT346 SC-59A TO-236 PDTA123YK PDTC123YM SOT883
7.2. Size:137K nxp
pdtc123y.pdf
PDTC123Y series NPN resistor-equipped transistors; R1 = 2.2 k , R2 = 10 k Rev. 04 16 November 2009 Product data sheet 1. Product profile 1.1 General description NPN Resistor-Equipped Transistors (RET) family. Table 1. Product overview Type number Package PNP complement NXP JEITA JEDEC PDTC123YE SOT416 SC-75 - PDTA123YE PDTC123YK SOT346 SC-59A TO-236 PDTA123YK PDTC123YM SOT883
7.3. Size:1919K rohm
dtc123yefra dtc123ykafra dtc123yuafra.pdf
DTC123Y series Datasheet NPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors) AEC-Q101 Qualified lOutline l Parameter Value EMT3 UMT3 VCC 50V IC(MAX.) 100mA R1 2.2k DTC123YEFRA DTC123YUAFRA DTC123YE DTC123YUA R2 SOT-416(SC-75A) SOT-323(SC-70) 10k SMT3 lFeatures l 1) Built-In
7.4. Size:581K rohm
dtc123ye.pdf
DTC123Y series Datasheet NPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors) lOutline EMT3 UMT3 Parameter Value OUT OUT VCC 50V IN IN IC(MAX.) 100mA GND GND R1 2.2kW DTC123YE DTC123YUA R2 SOT-416 (SC-75A) 10kW SOT-323 (SC-70) SMT3 lFeatures OUT 1) Built-In Biasing Resistors IN 2) Built-in bias resistors enable the configuration of GND
7.5. Size:91K rohm
dtc123yka dtc123yua.pdf
100mA / 50V Digital transistors (with built-in resistors) DTC123YE / DTC123YUA / DTC123YKA Applications Dimensions (Unit mm) Inverter, Interface, Driver DTC123YE 1.6 0.7 0.55 0.3 Features ( ) 1)Built-in bias resistors enable the configuration of an 3 inverter circuit without connecting external input ( ) ( ) 2 1 resistors (see equivalent circuit). 0.2 0.2
7.6. Size:139K rohm
dtc123y-ser.pdf
100mA / 50V Digital transistors (with built-in resistors) DTC123YE / DTC123YUA / DTC123YKA Applications Dimensions (Unit mm) Inverter, Interface, Driver DTC123YE 1.6 0.7 0.55 0.3 Features ( ) 1)Built-in bias resistors enable the configuration of an 3 inverter circuit without connecting external input ( ) ( ) 2 1 resistors (see equivalent circuit). 0.2 0.2
7.7. Size:69K rohm
dtc123ye-yua-yka 62 sot416 323 346.pdf
Transistors Digital transistors (built-in resistors) DTC123YE / DTC123YUA / DTC123YKA DTC123YSA FFeatures FExternal dimensions (Units mm) 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin- film resistors with complete isola- tion to allow negative bias
7.8. Size:237K diodes
ddtc123ye.pdf
DDTC (R1 R2 SERIES) E NPN PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction A SOT-523 Complementary PNP Types Available (DDTA) Built-In Biasing Resistors, R1 R2 Dim Min Max Typ Lead Free/RoHS Compliant (Note 2) B C A 0.15 0.30 0.22 TOP VIEW "Green" Device (Note 3 and 4) B 0.75 0.85 0.80 C 1.45 1.75 1.60
7.9. Size:204K diodes
ddtc123yka.pdf
DDTC (R1 R2 SERIES) KA NPN PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction Complementary PNP Types Available (DDTA) A Built-In Biasing Resistors, R1 R2 SC-59 Lead Free/RoHS Compliant (Note 1) Dim Min Max "Green" Device, Note 2 and 3 B C A 0.35 0.50 B 1.50 1.70 Mechanical Data C 2.70 3.00 G Case
7.10. Size:203K diodes
ddtc123yua.pdf
DDTC (R1 R2 SERIES) UA NPN PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction SOT-323 A Complementary PNP Types Available (DDTA) Dim Min Max Built-In Biasing Resistors, R1 R2 A 0.25 0.40 Lead Free/RoHS Compliant (Note 1) B 1.15 1.35 B C "Green" Device (Note 2 & 3) C 2.00 2.20 Mechanical Data D 0.65 No
7.11. Size:93K diodes
ddtc123yca.pdf
DDTC (R1 R2 SERIES) CA NPN PRE-BIASED SMALL SIGNAL SOT23 SURFACE MOUNT TRANSISTOR Product Summary Features and Benefits Epitaxial Planar Die Construction Part Number R1 (NOM) R2 (NOM) Complementary PNP Types Available (DDTA) DDTC113ZCA 1K 10K Built-In Biasing Resistors, R1 R2 DDTC123YCA 2.2K 10K Lead Free , RoHS Compliant (Note 1) DDTC123JCA
7.12. Size:141K utc
dtc123y.pdf
UNISONIC TECHNOLOGIES CO., LTD DTC123Y NPN SILICON TRANSISTOR NPN DIGITAL TRANSISTOR (BUILT- IN BIAS RESISTORS) FEATURES * Built-in bias resistors that implies easy ON/OFF applications. * The bias resistors are thin-film resistors with complete isolation to allow negative input. EQUIVALENT CIRCUIT ORDERING INFORMATION Ordering Number Pin Assignment Package Packing
7.14. Size:143K lge
dtc123y.pdf
DTC123YE/DTC123YUA/DTC123YCA DTC123YKA/DTC123YSA Digital Transistor(NPN) Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors(see equivalent circuit). 2) The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. They also have the advantage of almost com
7.15. Size:146K cystek
dtc123ys3.pdf
Spec. No. C362S3 Issued Date 2002.08.16 CYStech Electronics Corp. Revised Date 2002.11.02 Page No. 1/4 General Purpose NPN Digital Transistors (Built-in Resistors) DTC123YS3 Features Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). The bias resistors consist of thin-f
7.16. Size:334K lrc
ldtc123yet1g.pdf
LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor NPN Silicon Surface Mount Transistor LDTC123YET1G with Monolithic Bias Resistor Network Applications Inverter, Interface, Driver 3 Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input 1 resistors (see equivalent circuit). 2 2) The bias resistors consist
7.17. Size:1230K kexin
dtc123yua.pdf
SMD Type Transistors Digital Transistors DTC123YUA (KDTC123YUA) Features Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors(see equivalent circuit) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input.They also have the advantage of almost complet
7.18. Size:1162K kexin
dtc123ysa.pdf
DIP Type Transistors Digital Transistors DTC123YSA (KDTC123YSA) TO-92S Unit mm 4.0 0.1 Features 2.48 0.2 45 TYP Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors(see equivalent circuit) 0.48 (max) 0.35 (min ) The bias resistors consist of thin-film resistors with complete isolation to allow posit
7.19. Size:1248K kexin
dtc123ye.pdf
SMD Type Transistors Digital Transistors DTC123YE (KDTC123YE ) SOT-523 U nit m m +0. 1 1.6 -0. 1 +0.1 1.0 -0.1 +0.05 0.2 -0.05 0.15 0.05 Features Built-in bias resistors enable the configuration of an inverter circuit 2 1 without connecting external input resistors(see equivalent circuit) The bias resistors consist of thin-film resistors with complete isolatio
7.20. Size:1161K kexin
dtc123ym.pdf
SMD Type Transistors Digital Transistors DTC123YM (KDTC123YM) SOT-723 Unit mm Features 1 Built-in bias resistors enable the configuration of an inverter circuit 3 2 without connecting external input resistors(see equivalent circuit) The bias resistors consist of thin-film resistors with complete 0.80 0.05 0.50 (max) isolation to allow positive biasing of the inpu
7.21. Size:1240K kexin
dtc123yca.pdf
SMD Type Transistors Digital Transistors DTC123YCA (KDTC123YCA) SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 Features 3 Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors(see equivalent circuit) The bias resistors consist of thin-film resistors with complete 1 2 isolation to allow positive biasing of t
7.22. Size:109K chenmko
chdtc123yegp.pdf
CHENMKO ENTERPRISE CO.,LTD CHDTC123YEGP SURFACE MOUNT NPN Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 100 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. (SC-75/SOT-416) SC-75/SOT-416 * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation. * High saturation
7.23. Size:94K chenmko
chdtc123yugp.pdf
CHENMKO ENTERPRISE CO.,LTD CHDTC123YUGP SURFACE MOUNT NPN Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 100 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. (SC-70/SOT-323) SC-70/SOT-323 * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation. * High saturation
7.24. Size:86K chenmko
chdtc123ykgp.pdf
CHENMKO ENTERPRISE CO.,LTD CHDTC123YKGP SURFACE MOUNT NPN Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 100 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. (SOT-23) SOT-23 * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation. * High saturation current capabi
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