DTC123YS3 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: DTC123YS3

Código: 8Y

Material: Si

Polaridad de transistor: Pre-Biased-NPN

Resistencia de Entrada Base R1 = 2.2 kOhm

Resistencia Base-Emisor R2 = 10 kOhm

Ratio típica de resistencia R1/R2 = 0.22

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.2 W

Tensión colector-emisor (Vce): 50 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 0.1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 250 MHz

Ganancia de corriente contínua (hFE): 33

Encapsulados: SOT-323

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DTC123YS3 datasheet

 ..1. Size:146K  cystek
dtc123ys3.pdf pdf_icon

DTC123YS3

Spec. No. C362S3 Issued Date 2002.08.16 CYStech Electronics Corp. Revised Date 2002.11.02 Page No. 1/4 General Purpose NPN Digital Transistors (Built-in Resistors) DTC123YS3 Features Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). The bias resistors consist of thin-f

 6.1. Size:137K  nxp
pdtc123yk pdtc123ys.pdf pdf_icon

DTC123YS3

PDTC123Y series NPN resistor-equipped transistors; R1 = 2.2 k , R2 = 10 k Rev. 04 16 November 2009 Product data sheet 1. Product profile 1.1 General description NPN Resistor-Equipped Transistors (RET) family. Table 1. Product overview Type number Package PNP complement NXP JEITA JEDEC PDTC123YE SOT416 SC-75 - PDTA123YE PDTC123YK SOT346 SC-59A TO-236 PDTA123YK PDTC123YM SOT883

 6.2. Size:134K  secos
dtc123yseries.pdf pdf_icon

DTC123YS3

 6.3. Size:1162K  kexin
dtc123ysa.pdf pdf_icon

DTC123YS3

DIP Type Transistors Digital Transistors DTC123YSA (KDTC123YSA) TO-92S Unit mm 4.0 0.1 Features 2.48 0.2 45 TYP Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors(see equivalent circuit) 0.48 (max) 0.35 (min ) The bias resistors consist of thin-film resistors with complete isolation to allow posit

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