DTC144TKAFRA . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: DTC144TKAFRA
Código: `06
Material: Si
Polaridad de transistor: Pre-Biased-NPN
Resistencia de Entrada Base R1 = 47 kOhm
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.2 W
Tensión colector-base (Vcb): 50 V
Tensión colector-emisor (Vce): 50 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 250 MHz
Ganancia de corriente contínua (hfe): 100
Paquete / Cubierta: SOT-346
Búsqueda de reemplazo de transistor bipolar DTC144TKAFRA
DTC144TKAFRA Datasheet (PDF)
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dtc144tka.pdf
DTC144T seriesDatasheetNPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors)lOutlinelParameter Value VMT3 EMT3VCEO50VIC100mA R147kDTC144TM DTC144TE(SC-105AA) SOT-416(SC-75A) UMT3 SMT3lFeaturesl1) Built-In Biasing Resistor 2) Built-in bias resistors enable the configuration of DTC144TUA DTC144TK
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DDTC (R1-ONLY SERIES) KA NPN PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction A SC-59 Complementary PNP Types Available (DDTA) CDim Min Max Built-In Biasing Resistor, R1 only A 0.35 0.50 Lead Free/RoHS Compliant (Note 2) B CB 1.50 1.70 "Green" Device, Note 3 and 4 C 2.70 3.00 Mechanical Data EBD 0.9
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DISCRETE SEMICONDUCTORS DATA SHEETPDTC144T seriesNPN resistor-equipped transistors; R1 = 47 k, R2 = openProduct data sheet 2004 Aug 17Supersedes data of 2004 Apr 06NXP Semiconductors Product data sheetNPN resistor-equipped transistors; PDTC144T seriesR1 = 47 k, R2 = openFEATURES QUICK REFERENCE DATA Built-in bias resistorsSYMBOL PARAMETER TYP. MAX. UNIT S
chdtc144tkgp.pdf
CHENMKO ENTERPRISE CO.,LTDCHDTC144TKGPSURFACE MOUNT NPN Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 100 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SOT-23) SOT-23* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation current capabil
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