EMH6 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

EMH6 / UMH6N / IMH6A Transistors General purpose (dual digital transistors) EMH6 / UMH6N / IMH6A External dimensions (Unit : mm) Features 1) Two DTC144E chips in a EMT or UMT or SMT EMH6 package. ( ) ( )4 3( ) ( )5 2( ) ( )6 11.2 Equivalent circuit 1.6EMH6 / UMH6N IMH6A(3) (2) (1) (4) (5) (6)R1 R1ROHM : EMT6 Each lead has same dimensionsR2 R2 R2 R2

EMH6 / UMH6N / IMH6ADatasheetNPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors)lOutlineEMT6 UMT6Parameter Tr1 and Tr2(6) (6) (5) VCC50V (5) (4) (4) (1) (1) IC(MAX.)100mA (2) (2) (3) (3) R147kWEMH6 UMH6N R2(SC-107C) 47kW SOT-353 (SC-88) SMT6(4) lFeatures (5) (6) 1) Built-In Biasing Resistors, R1 = R2

EMH60DatasheetComplex Digital Transistors (Bias Resistor Built-in Transistors)lOutlinelParameter DTr1 and DTr2 EMT6VCC50VIC(MAX.)100mA R12.2kEMH60R2 (SC-107C) 47k lFeatures lInner circuitl l1) Two DTC023J chips in a EMT6 package.2) Transister elements are independent, eliminating

EMH61DatasheetComplex Digital Transistors (Bias Resistor Built-in Transistors)lOutlinelParameter DTr1 and DTr2 EMT6VCC50VIC(MAX.)100mA R110kEMH61R2 (SC-107C) 10k lFeatures lInner circuitl l1) Two DTC014E chips in a EMT6 package.2) Transister elements are independent, eliminating

EMH6FHA / UMH6NFHA / IMH6AFRAEMH6 / UMH6N / IMH6ADatasheetNPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors)AEC-Q101 QualifiedlOutlineEMT6 UMT6Parameter Tr1 and Tr2(6) (6) (5) VCC50V (5) (4) (4) (1) (1) IC(MAX.)100mA (2) (2) (3) (3) R147kWEMH6 UMH6N EMH6FHA UMH6NFHAR247kW (SC-107C) SOT-353 (SC-88) SMT6

EMH6FHA / UMH6NFHA / IMH6AFRAEMH6 / UMH6N / IMH6ADatasheetNPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors)AEC-Q101 QualifiedlOutlineEMT6 UMT6Parameter Tr1 and Tr2(6) (6) (5) VCC50V (5) (4) (4) (1) (1) IC(MAX.)100mA (2) (2) (3) (3) R147kWEMH6 UMH6N EMH6FHA UMH6NFHAR247kW (SC-107C) SOT-353 (SC-88) SMT6

CHENMKO ENTERPRISE CO.,LTDCHEMH6GPSURFACE MOUNTDual Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 30 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SOT-563)SOT-563* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation current capabilit