EMH6
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: EMH6
Código: H6
Material: Si
Polaridad de transistor: Pre-Biased-NPN
Resistencia de Entrada Base R1 = 47 kOhm
Resistencia Base-Emisor R2 = 47 kOhm
Ratio típica de resistencia R1/R2 = 1
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.15
W
Tensión colector-emisor (Vce): 50
V
Tensión emisor-base (Veb): 10
V
Corriente del colector DC máxima (Ic): 0.03
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 250
MHz
Ganancia de corriente contínua (hfe): 68
Paquete / Cubierta: SC-107C
Búsqueda de reemplazo de transistor bipolar EMH6
EMH6
Datasheet (PDF)
..1. Size:65K rohm
emh6 umh6n imh6a.pdf 
EMH6 / UMH6N / IMH6A Transistors General purpose (dual digital transistors) EMH6 / UMH6N / IMH6A External dimensions (Unit : mm) Features 1) Two DTC144E chips in a EMT or UMT or SMT EMH6 package. ( ) ( )4 3( ) ( )5 2( ) ( )6 11.2 Equivalent circuit 1.6EMH6 / UMH6N IMH6A(3) (2) (1) (4) (5) (6)R1 R1ROHM : EMT6 Each lead has same dimensionsR2 R2 R2 R2
..2. Size:444K rohm
emh6.pdf
EMH6 / UMH6N / IMH6ADatasheetNPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors)lOutlineEMT6 UMT6Parameter Tr1 and Tr2(6) (6) (5) VCC50V (5) (4) (4) (1) (1) IC(MAX.)100mA (2) (2) (3) (3) R147kWEMH6 UMH6N R2(SC-107C) 47kW SOT-353 (SC-88) SMT6(4) lFeatures (5) (6) 1) Built-In Biasing Resistors, R1 = R2
0.1. Size:682K rohm
emh60.pdf
EMH60DatasheetComplex Digital Transistors (Bias Resistor Built-in Transistors)lOutlinelParameter DTr1 and DTr2 EMT6VCC50VIC(MAX.)100mA R12.2kEMH60R2 (SC-107C) 47k lFeatures lInner circuitl l1) Two DTC023J chips in a EMT6 package.2) Transister elements are independent, eliminating
0.2. Size:675K rohm
emh61.pdf
EMH61DatasheetComplex Digital Transistors (Bias Resistor Built-in Transistors)lOutlinelParameter DTr1 and DTr2 EMT6VCC50VIC(MAX.)100mA R110kEMH61R2 (SC-107C) 10k lFeatures lInner circuitl l1) Two DTC014E chips in a EMT6 package.2) Transister elements are independent, eliminating
0.3. Size:1288K rohm
emh6fha umh6nfha.pdf
EMH6FHA / UMH6NFHA / IMH6AFRAEMH6 / UMH6N / IMH6ADatasheetNPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors)AEC-Q101 QualifiedlOutlineEMT6 UMT6Parameter Tr1 and Tr2(6) (6) (5) VCC50V (5) (4) (4) (1) (1) IC(MAX.)100mA (2) (2) (3) (3) R147kWEMH6 UMH6N EMH6FHA UMH6NFHAR247kW (SC-107C) SOT-353 (SC-88) SMT6
0.4. Size:1331K rohm
emh6fha umh6nfha imh6afra.pdf
EMH6FHA / UMH6NFHA / IMH6AFRAEMH6 / UMH6N / IMH6ADatasheetNPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors)AEC-Q101 QualifiedlOutlineEMT6 UMT6Parameter Tr1 and Tr2(6) (6) (5) VCC50V (5) (4) (4) (1) (1) IC(MAX.)100mA (2) (2) (3) (3) R147kWEMH6 UMH6N EMH6FHA UMH6NFHAR247kW (SC-107C) SOT-353 (SC-88) SMT6
0.5. Size:83K chenmko
chemh6gp.pdf
CHENMKO ENTERPRISE CO.,LTDCHEMH6GPSURFACE MOUNTDual Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 30 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SOT-563)SOT-563* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation current capabilit
Otros transistores... 2N3192
, 2N3193
, 2N3194
, 2N3195
, 2N3196
, 2N3197
, 2N3198
, 2N3199
, BC327
, 2N320
, 2N3200
, 2N3201
, 2N3202
, 2N3203
, 2N3204
, 2N3205
, 2N3206
.
