2SA1026 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

2SA1020 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1020 Power Amplifier Applications Unit: mmPower Switching Applications Low Collector saturation voltage: VCE (sat) = -0.5 V (max) (IC = -1 A) High collector power dissipation: PC = 900 mW High-speed switching: tstg = 1.0 s (typ.) Complementary to 2SC2655 Absolute Maximum Ratings (Ta = 2

2SA1020 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1020 Power Amplifier Applications Unit: mmPower Switching Applications Low Collector saturation voltage: VCE (sat) = -0.5 V (max) (IC = -1 A) High collector power dissipation: PC = 900 mW High-speed switching: tstg = 1.0 s (typ.) Complementary to 2SC2655 Absolute Maximum Ratings (Ta = 2

MCCMicro Commercial ComponentsTM 2SA1020L-O20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 913112SA1020L-YPhone: (818) 701-4933Fax: (818) 701-4939Features Halogen free available upon request by adding suffix "-HF" Collector of 0.9Watts of Power Dissipation. PNP Collector-current -2.0A Plastic-Encapsulate Operating and storage junction tempe

MCCMicro Commercial ComponentsTM 2SA1020-O20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 913112SA1020-YPhone: (818) 701-4933Fax: (818) 701-4939Features Collector of 0.9Watts of Power Dissipation. PNP Collector-current -2.0A Plastic-Encapsulate Operating and storage junction temperature range: -55 to +150 Epoxy meets UL 94 V-0 flammabilit

MCCMicro Commercial ComponentsTM 2SA1020-O20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 913112SA1020-YPhone: (818) 701-4933Fax: (818) 701-4939Features Collector of 0.9Watts of Power Dissipation. PNP Collector-current -2.0A Plastic-Encapsulate Operating and storage junction temperature range: -55 to +150 Epoxy meets UL 94 V-0 flammabilit

MCCMicro Commercial ComponentsTM 2SA1020L-O20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 913112SA1020L-YPhone: (818) 701-4933Fax: (818) 701-4939Features Halogen free available upon request by adding suffix "-HF" Collector of 0.9Watts of Power Dissipation. PNP Collector-current -2.0A Plastic-Encapsulate Operating and storage junction tempe

2SA1020One Watt High Current PNP TransistorFeatures This is a Pb-Free Device*http://onsemi.comMAXIMUM RATINGSVOLTAGE AND CURRENTRating Symbol Value UnitARE NEGATIVE FORCollector-Emitter Voltage VCE 50 VdcPNP TRANSISTORSCollector-Base Voltage VCB 50 VdcEmitter-Base Voltage VEB 5.0 VdcCOLLECTORCollector Current - Continuous IC 2.0 Adc2Total Power Dissipation @

2SA1020One Watt High Current PNP TransistorFeatures This is a Pb-Free Device*http://onsemi.comMAXIMUM RATINGSVOLTAGE AND CURRENTRating Symbol Value UnitARE NEGATIVE FORCollector-Emitter Voltage VCE 50 VdcPNP TRANSISTORSCollector-Base Voltage VCB 50 VdcEmitter-Base Voltage VEB 5.0 VdcCOLLECTORCollector Current - Continuous IC 2.0 Adc2Total Power Dissipation @

Transistor2SA1022Silicon PNP epitaxial planer typeFor high-frequency amplificationUnit: mmComplementary to 2SC2295+0.22.8 0.3+0.25Features0.65 0.15 1.5 0.05 0.65 0.15High transition frequency fT.Mini type package, allowing downsizing of the equipment and1automatic insertion through the tape packing and the magazinepacking.32Absolute Maximum Ratings

Transistor2SA1022Silicon PNP epitaxial planer typeFor high-frequency amplificationUnit: mmComplementary to 2SC2295+0.22.8 0.3+0.25Features0.65 0.15 1.5 0.05 0.65 0.15High transition frequency fT.Mini type package, allowing downsizing of the equipment and1automatic insertion through the tape packing and the magazinepacking.32Absolute Maximum Ratings

UNISONIC TECHNOLOGIES CO., LTD 2SA1020 PNP SILICON TRANSISTOR 3SILICON PNP EPITAXIAL TRANSISTOR 211SOT-23SOT-89(JEDEC TO-236) DESCRIPTION The UTC 2SA1020 is designed for power amplifier and power switching applications. 1TO-92 FEATURES *Low collector saturation voltage: VCE(SAT)=-0.5V(MAX) (IC= -1A) *High speed switching time: tSTG=1.0s(TYP) 1*C

2SA1029, 2SA1030Silicon PNP EpitaxialApplication Low frequency amplifier Complementary pair with 2SC458 and 2SC2308OutlineTO-92 (1)1. Emitter2. Collector3. Base3212SA1029, 2SA1030Absolute Maximum Ratings (Ta = 25C)Item Symbol 2SA1029 2SA1030 UnitCollector to base voltage VCBO 30 55 VCollector to emitter voltage VCEO 30 50 VEmitter to base

2SA1025, 2SA1081, 2SA1082Silicon PNP EpitaxialApplication Low frequency amplifier Complementary pair with 2SC2396, 2SC2543 and 2SC2544OutlineTO-92 (1)1. Emitter2. Collector3. Base3212SA1025, 2SA1081, 2SA1082Absolute Maximum Ratings (Ta = 25C)Item Symbol 2SA1025 2SA1081 2SA1082 UnitCollector to base voltage VCBO 60 90 120 VCollector to emitter

2SA1020 -2A, -50V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92MODFEATURES N Power amplifier applications G HEmitter Collector Base CLASSIFICATION OF hFE(1) MJLProduct-Rank 2SA1020-O 2SA1020-Y A DRange 70-140 120-240 BKE FCCollector

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TRANSISTOR (PNP) 1. EMITTER Power mplifier pplications 2. COLLECTOR3. BASE Equivalent Circuit

JMnic Product Specification Silicon PNP Power Transistors 2SA1021 DESCRIPTION With TO-126 package High breakdown voltage Large current capacity APPLICATIONS For color TV sound output;converters Inverters applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITI

2SA1020 TO-92L Transistor (PNP)TO-92L1. EMITTER 2. COLLECTOR 3. BASE 2 3 14.700Features 5.100 Power amplifier applications 7.8008.200MAXIMUM RATINGS (TA=25 unless otherwise noted) 0.600Symbol Parameter Value Units 0.800VCBO Collector-Base Voltage -50 V 0.3500.550VCEO Collector-Emitter Voltage -50 V 13.80014.200VEBO Emitter-Base Voltage -5 V IC

2SA1020 TO-92MOD Transistor (PNP)TO-92MOD1. EMITTER 1 22. COLLECTOR 3 3. BASE Features5.8006.200 Power amplifier applications MAXIMUM RATINGS (TA=25 unless otherwise noted) 8.4008.800Symbol Parameter Value Units0.9001.100VCBO Collector-Base Voltage -50 V 0.4000.600VCEO Collector-Emitter Voltage -50 V 13.800VEBO Emitter-Base Voltage -5 V 14.20

2SA1020PNP213231. EMITTER2. COLLECTOR13. BASE TO-92MODValueVCEO -50-50-5-2,090017.251382SA1020=A1020-10 -50u-0.1-40-0.1 u-5.01WEITRONhttp://www.weitron.com.tw2SA1020ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)CharacteristicsTypSymbol Max UnitMinON CHARACTERISTICSDC Current Gain--(IC=-5

2SA1020 Rev.F Mar.-2016 DATA SHEET / Descriptions TO-92LM PNP Silicon PNP transistor in a TO-92LM Plastic Package. / Features ,, 2SC2655 Low collector saturation voltage high speed switching time, complementary pair with 2SC2655. / Applications ,

SMD Type TransistorsPNP Transistors2SA10201.70 0.1 Features Collector Current Capability IC=-2A Collector Emitter Voltage VCEO=-50V Complementary to 2SC26550.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -50 Collector - Emitter Voltage VCEO -50 V Emitter -

SMD Type TransistorsPNP Transistors2SA1022SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.1 Features3 High transition frequency fT. Complementary to 2SC22951 2+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -30 Collector - Emitter Vol

CHENMKO ENTERPRISE CO.,LTD2SA1020GPSMALL FLAT PNP Epitaxial Transistor VOLTAGE 50 Volts CURRENT 0.5 AmpereAPPLICATION* Power amplifier .FEATURE* Small flat package. (SOT-23) SOT-23* Low saturation voltage VCE(sat)=-0.5V(max.)(IC=-0.5A) * High speed switching time: tstg= 1.0uSec (typ.)* High saturation current capability.(1)(3)CONSTRUCTION(2)* PNP Switching Transi

2SA1020I(3CG1020I) PNP /SILICON PNP TRANSISTOR :, Purpose: Power amplifier and switching applications. :,, 2SC2655I(3DG2655I) Features: Low collector saturation voltage high speed switching time, complementary pair with 2SC2655I(3DG2655I). /Absolute maximum rating

isc Silicon PNP Power Transistor 2SA1028DESCRIPTIONHigh Current CapabilityGood Linearity of hFECollector-Emitter Breakdown Voltage-: V = -100V(Min.)(BR)CEOMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE U

isc Silicon PNP Power Transistor 2SA1021DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-V = -150V (Min)(BR)CEOComplement to Type 2SC2481Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSColor TV vertical deflection output applications.Color TV class B sound output applications.ABSOLUTE MAXIMUM RATINGS(Ta=25)SYMB