LDTA114GET1G Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: LDTA114GET1G

Código: Q1

Material: Si

Polaridad de transistor: Pre-Biased-PNP

Resistencia Base-Emisor R2 = 10 kOhm

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.2 W

Tensión colector-base (Vcb): 50 V

Tensión colector-emisor (Vce): 50 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 0.1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 250 MHz

Ganancia de corriente contínua (hFE): 30

Encapsulados: SC-89

 Búsqueda de reemplazo de LDTA114GET1G

- Selecciónⓘ de transistores por parámetros

 

LDTA114GET1G datasheet

 ..1. Size:496K  lrc
 ldta114get1g.pdf pdf_icon

LDTA114GET1G

LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor PNP Silicon Surface Mount Transistor LDTA114GET1G with Monolithic Bias Resistor Network Applications Inverter, Interface, Driver 3 Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input 1 resistors (see equivalent circuit). 2 2) The bias resistors consist

 7.1. Size:770K  lrc
 ldta114eet1g ldta114tet1g ldta124xet1g ldta143eet1g ldta144eet1g.pdf pdf_icon

LDTA114GET1G

LESHAN RADIO COMPANY, LTD. Bias Resistor Transistors LDTC114EET1G Series S-LDTC114EET1G Series NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network cons

 7.2. Size:768K  lrc
 ldta114eet1g ldta124eet1g ldta144eet1g ldta114yet1g ldta114tet1g ldta143tet1g ldta123eet1g ldta143eet1g ldta143zet1g ldta124xet1g ldta123jet1g ldta115eet1g ldta144wet1g.pdf pdf_icon

LDTA114GET1G

LESHAN RADIO COMPANY, LTD. Bias Resistor Transistors LDTA114EET1G Series PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors

 7.3. Size:225K  lrc
 ldta114wet1g.pdf pdf_icon

LDTA114GET1G

MOSTRAR MÁS

Otros transistores... HD2F2Q, HD2F3P, HD2L2Q, HD2L3N, HE1A4A, LDTA113TKT1G, LDTA113ZET1G, LDTA114EM3T5G, 2N2907, LDTA114TM3T5G, LDTA114WET1G, LDTA114YM3T5G, LDTA115EM3T5G, LDTA115GET1G, LDTA115TET1G, LDTA123EM3T5G, LDTA123JM3T5G