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LDTA114GET1G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: LDTA114GET1G
   Código: Q1
   Material: Si
   Polaridad de transistor: Pre-Biased-PNP
   Resistencia Base-Emisor R2 = 10 kOhm

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.2 W
   Tensión colector-base (Vcb): 50 V
   Tensión colector-emisor (Vce): 50 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 250 MHz
   Ganancia de corriente contínua (hfe): 30
   Paquete / Cubierta: SC-89
 

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LDTA114GET1G Datasheet (PDF)

 ..1. Size:496K  lrc
ldta114get1g.pdf pdf_icon

LDTA114GET1G

LESHAN RADIO COMPANY, LTD.Bias Resistor TransistorPNP Silicon Surface Mount TransistorLDTA114GET1Gwith Monolithic Bias Resistor Network Applications Inverter, Interface, Driver 3 Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input 1resistors (see equivalent circuit). 22) The bias resistors consist

 7.1. Size:770K  lrc
ldta114eet1g ldta114tet1g ldta124xet1g ldta143eet1g ldta144eet1g.pdf pdf_icon

LDTA114GET1G

LESHAN RADIO COMPANY, LTD.Bias Resistor TransistorsLDTC114EET1G SeriesS-LDTC114EET1G SeriesNPN Silicon Surface Mount Transistorswith Monolithic Bias Resistor NetworkThis new series of digital transistors is designed to replace a singledevice and its external resistor bias network. The BRT (Bias ResistorTransistor) contains a single transistor with a monolithic bias networkcons

 7.2. Size:768K  lrc
ldta114eet1g ldta124eet1g ldta144eet1g ldta114yet1g ldta114tet1g ldta143tet1g ldta123eet1g ldta143eet1g ldta143zet1g ldta124xet1g ldta123jet1g ldta115eet1g ldta144wet1g.pdf pdf_icon

LDTA114GET1G

LESHAN RADIO COMPANY, LTD.Bias Resistor TransistorsLDTA114EET1G SeriesPNP Silicon Surface Mount Transistorswith Monolithic Bias Resistor NetworkThis new series of digital transistors is designed to replace a singledevice and its external resistor bias network. The BRT (Bias ResistorTransistor) contains a single transistor with a monolithic bias networkconsisting of two resistors

 7.3. Size:225K  lrc
ldta114wet1g.pdf pdf_icon

LDTA114GET1G

Otros transistores... HD2F2Q , HD2F3P , HD2L2Q , HD2L3N , HE1A4A , LDTA113TKT1G , LDTA113ZET1G , LDTA114EM3T5G , 2SC2482 , LDTA114TM3T5G , LDTA114WET1G , LDTA114YM3T5G , LDTA115EM3T5G , LDTA115GET1G , LDTA115TET1G , LDTA123EM3T5G , LDTA123JM3T5G .

History: D3858-10 | 40309S | MM1153 | MA1705 | KT837A | MP111 | 2N6291

 

 
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