LDTB113EET1G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: LDTB113EET1G
Código: K4
Material: Si
Polaridad de transistor: Pre-Biased-PNP
Resistencia de Entrada Base R1 = 1 kOhm
Resistencia Base-Emisor R2 = 1 kOhm
Ratio típica de resistencia R1/R2 = 1
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.2 W
Tensión colector-emisor (Vce): 50 V
Tensión emisor-base (Veb): 10 V
Corriente del colector DC máxima (Ic): 0.5 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 200 MHz
Ganancia de corriente contínua (hfe): 33
Paquete / Cubierta: SC-89
Búsqueda de reemplazo de transistor bipolar LDTB113EET1G
LDTB113EET1G Datasheet (PDF)
ldtb113eet1g.pdf
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ldtb114eet1g.pdf
LESHAN RADIO COMPANY, LTD.Bias Resistor TransistorPNP Silicon Surface Mount TransistorLDTB114EET1Gwith Monolithic Bias Resistor Network Applications Inverter, Interface, Driver 3 Features 1) Built-in bias resistors enable the configuration of an 1inverter circuit without connecting external input resistors (see equivalent circuit). 22) The bias resistors consis
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