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LDTC114EET1G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: LDTC114EET1G
   Código: 8A
   Material: Si
   Polaridad de transistor: Pre-Biased-NPN
   Resistencia de Entrada Base R1 = 10 kOhm
   Resistencia Base-Emisor R2 = 10 kOhm
   Ratio típica de resistencia R1/R2 = 1

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.2 W
   Tensión colector-base (Vcb): 50 V
   Tensión colector-emisor (Vce): 50 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 35
   Paquete / Cubierta: SC-89
 

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LDTC114EET1G Datasheet (PDF)

 ..1. Size:435K  lrc
 ldtc114eet1g.pdf pdf_icon

LDTC114EET1G

LESHAN RADIO COMPANY, LTD.Bias Resistor TransistorsLDTC114EET1G SeriesNPN Silicon Surface Mount TransistorsS-LDTC114EET1G Serieswith Monolithic Bias Resistor NetworkThis new series of digital transistors is designed to replace a singledevice and its external resistor bias network. The BRT (Bias ResistorTransistor) contains a single transistor with a monolithic bias networkcons

 6.1. Size:467K  lrc
 ldtc114em3t5g.pdf pdf_icon

LDTC114EET1G

LESHAN RADIO COMPANY, LTD.Bias Resistor TransistorsNPN Silicon Surface Mount TransistorsLDTC114EM3T5GWith Monolithic Bias Resistor NetworkSeriesThis new series of digital transistors is designed to replace a singledevice and its external resistor bias network. The BRT (Bias Resistor3Transistor) contains a single transistor with a monolithic bias networkconsisting of two resi

 6.2. Size:545K  lrc
 ldtc114em3t5g ldtc124em3t5g ldtc144em3t5g ldtc114ym3t5g ldtc114tm3t5g ldtc143tm3t5g ldtc123em3t5g ldtc143em3t5g ldtc143zm3t5g ldtc124xm3t5g ldtc123jm3t5g ldtc115em3t5g ldtc144wm3t5g ldtc144tm3t5g.pdf pdf_icon

LDTC114EET1G

LESHAN RADIO COMPANY, LTD.Bias Resistor TransistorsNPN Silicon Surface Mount TransistorsSeriesLDTC114EM3T5GLDTC114EM3T5GS-LDTC114EM3T5G SeriesWith Monolithic Bias Resistor NetworkThis new series of digital transistors is designed to replace a singledevice and its external resistor bias network. The BRT (Bias ResistorTransistor) contains a single transistor with a monolithic

 6.3. Size:545K  lrc
 ldtc114em3t5g ldtc124em3t5g ldtc144em3t5g ldtc114ym3t5g ldtc114tm3t5g ldtc143tm3t5g ldtc123em3t5g.pdf pdf_icon

LDTC114EET1G

LESHAN RADIO COMPANY, LTD.Bias Resistor TransistorsNPN Silicon Surface Mount TransistorsSeriesLDTC114EM3T5GLDTC114EM3T5GS-LDTC114EM3T5G SeriesWith Monolithic Bias Resistor NetworkThis new series of digital transistors is designed to replace a singledevice and its external resistor bias network. The BRT (Bias ResistorTransistor) contains a single transistor with a monolithic

MOSTRAR MÁS

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: BC846BLP4

 

 
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