LDTC114EM3T5G Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: LDTC114EM3T5G
Código: 8A
Material: Si
Polaridad de transistor: Pre-Biased-NPN
Resistencia de Entrada Base R1 = 10 kOhm
Resistencia Base-Emisor R2 = 10 kOhm
Ratio típica de resistencia R1/R2 = 1
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.26 W
Tensión colector-base (Vcb): 50 V
Tensión colector-emisor (Vce): 50 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hFE): 35
Encapsulados: SOT-723
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LDTC114EM3T5G datasheet
ldtc114em3t5g.pdf
LESHAN RADIO COMPANY, LTD. Bias Resistor Transistors NPN Silicon Surface Mount Transistors LDTC114EM3T5G With Monolithic Bias Resistor Network Series This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor 3 Transistor) contains a single transistor with a monolithic bias network consisting of two resi
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LESHAN RADIO COMPANY, LTD. Bias Resistor Transistors NPN Silicon Surface Mount Transistors Series LDTC114EM3T5G LDTC114EM3T5G S-LDTC114EM3T5G Series With Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic
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LESHAN RADIO COMPANY, LTD. Bias Resistor Transistors NPN Silicon Surface Mount Transistors Series LDTC114EM3T5G LDTC114EM3T5G S-LDTC114EM3T5G Series With Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic
ldtc114eet1g.pdf
LESHAN RADIO COMPANY, LTD. Bias Resistor Transistors LDTC114EET1G Series NPN Silicon Surface Mount Transistors S-LDTC114EET1G Series with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network cons
Otros transistores... LDTB123EET1G, LDTB123TET1G, LDTB123YET1G, LDTB143EET1G, LDTB143TKT1G, LDTBG12GPT1G, LDTC113ZET1G, LDTC114EET1G, BD140, LDTC114GET1G, LDTC114TET1G, LDTC114TM3T5G, LDTC114WET1G, LDTC114YET1G, LDTC114YM3T5G, LDTC115EET1G, LDTC115EM3T5G
History: GES5128 | 2SC2420 | D45H5
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