LDTC114GET1G Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: LDTC114GET1G

Código: H8

Material: Si

Polaridad de transistor: Pre-Biased-NPN

Resistencia Base-Emisor R2 = 10 kOhm

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.2 W

Tensión colector-base (Vcb): 50 V

Tensión colector-emisor (Vce): 50 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 0.1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 250 MHz

Ganancia de corriente contínua (hFE): 30

Encapsulados: SC-89

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LDTC114GET1G datasheet

 ..1. Size:325K  lrc
 ldtc114get1g.pdf pdf_icon

LDTC114GET1G

LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor NPN Silicon Surface Mount Transistor LDTC114GET1G with Monolithic Bias Resistor Network Applications Inverter, Interface, Driver 3 Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input 1 resistors (see equivalent circuit). 2 2) The bias resistors consist

 7.1. Size:420K  lrc
 ldtc114wet1g.pdf pdf_icon

LDTC114GET1G

 7.2. Size:467K  lrc
 ldtc114em3t5g.pdf pdf_icon

LDTC114GET1G

LESHAN RADIO COMPANY, LTD. Bias Resistor Transistors NPN Silicon Surface Mount Transistors LDTC114EM3T5G With Monolithic Bias Resistor Network Series This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor 3 Transistor) contains a single transistor with a monolithic bias network consisting of two resi

 7.3. Size:545K  lrc
 ldtc114em3t5g ldtc124em3t5g ldtc144em3t5g ldtc114ym3t5g ldtc114tm3t5g ldtc143tm3t5g ldtc123em3t5g ldtc143em3t5g ldtc143zm3t5g ldtc124xm3t5g ldtc123jm3t5g ldtc115em3t5g ldtc144wm3t5g ldtc144tm3t5g.pdf pdf_icon

LDTC114GET1G

LESHAN RADIO COMPANY, LTD. Bias Resistor Transistors NPN Silicon Surface Mount Transistors Series LDTC114EM3T5G LDTC114EM3T5G S-LDTC114EM3T5G Series With Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic

MOSTRAR MÁS

Otros transistores... LDTB123TET1G, LDTB123YET1G, LDTB143EET1G, LDTB143TKT1G, LDTBG12GPT1G, LDTC113ZET1G, LDTC114EET1G, LDTC114EM3T5G, TIP3055, LDTC114TET1G, LDTC114TM3T5G, LDTC114WET1G, LDTC114YET1G, LDTC114YM3T5G, LDTC115EET1G, LDTC115EM3T5G, LDTC115GET1G