LDTC115EET1G Todos los transistores

 

LDTC115EET1G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: LDTC115EET1G
   Código: 8N
   Material: Si
   Polaridad de transistor: Pre-Biased-NPN
   Resistencia de Entrada Base R1 = 100 kOhm
   Resistencia Base-Emisor R2 = 100 kOhm
   Ratio típica de resistencia R1/R2 = 1

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.2 W
   Tensión colector-base (Vcb): 50 V
   Tensión colector-emisor (Vce): 50 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 80
   Paquete / Cubierta: SC-89
 

 Búsqueda de reemplazo de LDTC115EET1G

   - Selección ⓘ de transistores por parámetros

 

LDTC115EET1G Datasheet (PDF)

 6.1. Size:545K  lrc
 ldtc114em3t5g ldtc124em3t5g ldtc144em3t5g ldtc114ym3t5g ldtc114tm3t5g ldtc143tm3t5g ldtc123em3t5g ldtc143em3t5g ldtc143zm3t5g ldtc124xm3t5g ldtc123jm3t5g ldtc115em3t5g ldtc144wm3t5g ldtc144tm3t5g.pdf pdf_icon

LDTC115EET1G

LESHAN RADIO COMPANY, LTD.Bias Resistor TransistorsNPN Silicon Surface Mount TransistorsSeriesLDTC114EM3T5GLDTC114EM3T5GS-LDTC114EM3T5G SeriesWith Monolithic Bias Resistor NetworkThis new series of digital transistors is designed to replace a singledevice and its external resistor bias network. The BRT (Bias ResistorTransistor) contains a single transistor with a monolithic

 6.2. Size:545K  lrc
 ldtc143em3t5g ldtc143zm3t5g ldtc124xm3t5g ldtc123jm3t5g ldtc115em3t5g ldtc144wm3t5g ldtc144tm3t5g.pdf pdf_icon

LDTC115EET1G

LESHAN RADIO COMPANY, LTD.Bias Resistor TransistorsNPN Silicon Surface Mount TransistorsSeriesLDTC114EM3T5GLDTC114EM3T5GS-LDTC114EM3T5G SeriesWith Monolithic Bias Resistor NetworkThis new series of digital transistors is designed to replace a singledevice and its external resistor bias network. The BRT (Bias ResistorTransistor) contains a single transistor with a monolithic

 7.1. Size:353K  lrc
 ldtc115tet1g.pdf pdf_icon

LDTC115EET1G

LESHAN RADIO COMPANY, LTD.Bias Resistor TransistorNPN Silicon Surface Mount TransistorLDTC115TET1Gwith Monolithic Bias Resistor Network Applications Inverter, Interface, Driver 3 Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input 1resistors (see equivalent circuit). 22) The bias resistors consist

 7.2. Size:333K  lrc
 ldtc115get1g.pdf pdf_icon

LDTC115EET1G

LESHAN RADIO COMPANY, LTD.Bias Resistor TransistorNPN Silicon Surface Mount TransistorLDTC115GET1Gwith Monolithic Bias Resistor Network Applications Inverter, Interface, Driver 3 Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input 1resistors (see equivalent circuit). 22) The bias resistors consist

MOSTRAR MÁS

Otros transistores... LDTC114EET1G , LDTC114EM3T5G , LDTC114GET1G , LDTC114TET1G , LDTC114TM3T5G , LDTC114WET1G , LDTC114YET1G , LDTC114YM3T5G , BC557 , LDTC115EM3T5G , LDTC115GET1G , LDTC115TET1G , LDTC123EET1G , LDTC123EM3T5G , LDTC123JET1G , LDTC123JM3T5G , LDTC123TKT1G .

History: PBLS6023D | SCE309 | KTA701U | SFT351 | H933 | 2T7236B

 

 
Back to Top

 


 
.