LDTC123TKT1G Todos los transistores

 

LDTC123TKT1G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: LDTC123TKT1G
   Código: H1
   Material: Si
   Polaridad de transistor: Pre-Biased-NPN
   Resistencia de Entrada Base R1 = 2.2 kOhm

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.2 W
   Tensión colector-base (Vcb): 50 V
   Tensión colector-emisor (Vce): 50 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 250 MHz
   Ganancia de corriente contínua (hfe): 100
   Paquete / Cubierta: SC-89
 

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LDTC123TKT1G Datasheet (PDF)

 ..1. Size:223K  lrc
 ldtc123tkt1g.pdf pdf_icon

LDTC123TKT1G

 7.1. Size:334K  lrc
 ldtc123yet1g.pdf pdf_icon

LDTC123TKT1G

LESHAN RADIO COMPANY, LTD.Bias Resistor TransistorNPN Silicon Surface Mount TransistorLDTC123YET1Gwith Monolithic Bias Resistor Network Applications Inverter, Interface, Driver 3 Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input 1resistors (see equivalent circuit). 22) The bias resistors consist

 7.2. Size:545K  lrc
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LDTC123TKT1G

LESHAN RADIO COMPANY, LTD.Bias Resistor TransistorsNPN Silicon Surface Mount TransistorsSeriesLDTC114EM3T5GLDTC114EM3T5GS-LDTC114EM3T5G SeriesWith Monolithic Bias Resistor NetworkThis new series of digital transistors is designed to replace a singledevice and its external resistor bias network. The BRT (Bias ResistorTransistor) contains a single transistor with a monolithic

 7.3. Size:545K  lrc
 ldtc114em3t5g ldtc124em3t5g ldtc144em3t5g ldtc114ym3t5g ldtc114tm3t5g ldtc143tm3t5g ldtc123em3t5g.pdf pdf_icon

LDTC123TKT1G

LESHAN RADIO COMPANY, LTD.Bias Resistor TransistorsNPN Silicon Surface Mount TransistorsSeriesLDTC114EM3T5GLDTC114EM3T5GS-LDTC114EM3T5G SeriesWith Monolithic Bias Resistor NetworkThis new series of digital transistors is designed to replace a singledevice and its external resistor bias network. The BRT (Bias ResistorTransistor) contains a single transistor with a monolithic

MOSTRAR MÁS

Otros transistores... LDTC115EET1G , LDTC115EM3T5G , LDTC115GET1G , LDTC115TET1G , LDTC123EET1G , LDTC123EM3T5G , LDTC123JET1G , LDTC123JM3T5G , BC327 , LDTC123YET1G , LDTC124EET1G , LDTC124EM3T5G , LDTC124GET1G , LDTC124TET1G , LDTC124XET1G , LDTC124XM3T5G , LDTC125TET1G .

History: KSA1378-0 | NR421DF | ECG390 | 2SC2383-Y | BD191-4 | ECG237

 

 
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