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LDTD123EET1G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: LDTD123EET1G
   Código: E5
   Material: Si
   Polaridad de transistor: Pre-Biased-NPN
   Resistencia de Entrada Base R1 = 2.2 kOhm
   Resistencia Base-Emisor R2 = 2.2 kOhm
   Ratio típica de resistencia R1/R2 = 1

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.2 W
   Tensión colector-emisor (Vce): 50 V
   Tensión emisor-base (Veb): 10 V
   Corriente del colector DC máxima (Ic): 0.5 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 200 MHz
   Ganancia de corriente contínua (hfe): 39
   Paquete / Cubierta: SC-89

 Búsqueda de reemplazo de transistor bipolar LDTD123EET1G

 

LDTD123EET1G Datasheet (PDF)

 ..1. Size:367K  lrc
ldtd123eet1g.pdf

LDTD123EET1G
LDTD123EET1G

LESHAN RADIO COMPANY, LTD.Bias Resistor TransistorNPN Silicon Surface Mount TransistorLDTD123EET1Gwith Monolithic Bias Resistor Network Applications Inverter, Interface, Driver 3 Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input 1resistors (see equivalent circuit). 22) The bias resistors consist

 7.1. Size:369K  lrc
ldtd123ylt1g.pdf

LDTD123EET1G
LDTD123EET1G

LESHAN RADIO COMPANY, LTD.Bias Resistor TransistorNPN Silicon Surface Mount TransistorLDTD123YLT1Gwith Monolithic Bias Resistor NetworkS-LDTD123YLT1G Applications Inverter, Interface, Driver Features 31) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 12) The bias res

 7.2. Size:350K  lrc
ldtd123yet1g.pdf

LDTD123EET1G
LDTD123EET1G

LESHAN RADIO COMPANY, LTD.Bias Resistor TransistorNPN Silicon Surface Mount TransistorLDTD123YET1Gwith Monolithic Bias Resistor Network Applications Inverter, Interface, Driver 3 Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input 1resistors (see equivalent circuit). 22) The bias resistors consist

 7.3. Size:326K  lrc
ldtd123tet1g.pdf

LDTD123EET1G
LDTD123EET1G

LESHAN RADIO COMPANY, LTD.Bias Resistor TransistorNPN Silicon Surface Mount TransistorLDTD123TET1Gwith Monolithic Bias Resistor Network Applications Inverter, Interface, Driver 3 Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input 1resistors (see equivalent circuit). 22) The bias resistors consist

 7.4. Size:369K  lrc
ldtd123ylt1g ldtd123ylt3g.pdf

LDTD123EET1G
LDTD123EET1G

LESHAN RADIO COMPANY, LTD.Bias Resistor TransistorNPN Silicon Surface Mount TransistorLDTD123YLT1Gwith Monolithic Bias Resistor NetworkS-LDTD123YLT1G Applications Inverter, Interface, Driver Features 31) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 12) The bias res

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