LDTD123TET1G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: LDTD123TET1G
Código: E1
Material: Si
Polaridad de transistor: Pre-Biased-NPN
Resistencia de Entrada Base R1 = 2.2 kOhm
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.2 W
Tensión colector-base (Vcb): 50 V
Tensión colector-emisor (Vce): 40 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.5 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 200 MHz
Ganancia de corriente contínua (hfe): 100
Paquete / Cubierta: SC-89
Búsqueda de reemplazo de transistor bipolar LDTD123TET1G
LDTD123TET1G Datasheet (PDF)
ldtd123tet1g.pdf
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LESHAN RADIO COMPANY, LTD.Bias Resistor TransistorNPN Silicon Surface Mount TransistorLDTD123YLT1Gwith Monolithic Bias Resistor NetworkS-LDTD123YLT1G Applications Inverter, Interface, Driver Features 31) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 12) The bias res
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LESHAN RADIO COMPANY, LTD.Bias Resistor TransistorNPN Silicon Surface Mount TransistorLDTD123EET1Gwith Monolithic Bias Resistor Network Applications Inverter, Interface, Driver 3 Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input 1resistors (see equivalent circuit). 22) The bias resistors consist
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LESHAN RADIO COMPANY, LTD.Bias Resistor TransistorNPN Silicon Surface Mount TransistorLDTD123YLT1Gwith Monolithic Bias Resistor NetworkS-LDTD123YLT1G Applications Inverter, Interface, Driver Features 31) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 12) The bias res
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