LMUN2211LT1G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: LMUN2211LT1G
Código: A8A
Material: Si
Polaridad de transistor: Pre-Biased-NPN
Resistencia de Entrada Base R1 = 10 kOhm
Resistencia Base-Emisor R2 = 10 kOhm
Ratio típica de resistencia R1/R2 = 1
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.246 W
Tensión colector-base (Vcb): 50 V
Tensión colector-emisor (Vce): 50 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 35
Paquete / Cubierta: SOT-23
Búsqueda de reemplazo de transistor bipolar LMUN2211LT1G
LMUN2211LT1G Datasheet (PDF)
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LESHAN RADIO COMPANY, LTD.Bas Resstor TransstorNPN Silicon Surface Mount Transistorwith Monolithic Bias Resistor NetworkLMUN2211LT1G SeriesS-LMUN2211LT1G SeriesThis new series of digital transistors is designed to replace a singledevice and its external resistor bias network. The BRT (Bias ResistorTransistor) contains a single transistor with a monolithic bias network3
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LESHAN RADIO COMPANY, LTD.Bias Resistor TransistorsLMUN2135LT1GS-LMUN2135LT1GPNP Silicon Surface Mount Transistorswith Monolithic Bias Resistor Network 3This new series of digital transistors is designed to replace a single1device and its external resistor bias network. The BRT (Bias Resistor2Transistor) contains a single transistor with a monolithic bias networkconsisting
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LESHAN RADIO COMPANY, LTD.Bias Resistor TransistorsLMUN2110LT1GPNP Silicon Surface Mount TransistorsSerieswith Monolithic Bias Resistor Network3This new series of digital transistors is designed to replace a singledevice and its external resistor bias network. The BRT (Bias Resistor1Transistor) contains a single transistor with a monolithic bias network2consisting of two
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
