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LMUN5130T1G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: LMUN5130T1G
   Código: 6G
   Material: Si
   Polaridad de transistor: Pre-Biased-PNP
   Resistencia de Entrada Base R1 = 1 kOhm
   Resistencia Base-Emisor R2 = 1 kOhm
   Ratio típica de resistencia R1/R2 = 1

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.202 W
   Tensión colector-base (Vcb): 50 V
   Tensión colector-emisor (Vce): 50 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 3
   Paquete / Cubierta: SOT-323
     - Selección de transistores por parámetros

 

LMUN5130T1G Datasheet (PDF)

 6.1. Size:918K  lrc
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LMUN5130T1G

LESHAN RADIO COMPANY, LTD.Dual Bias Resistor TransistorsPNP Silicon Surface Mount TransistorsLMUN5111DW1T1GSerieswith Monolithic Bias Resistor NetworkThe BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias S-LMUN5111DW1T1Gnetwork consisting of two resistors; a series base resistor and a baseemitter resistor. TheseSeriesdigital transistors are

 9.1. Size:207K  lrc
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LMUN5130T1G

LESHAN RADIO COMPANY, LTD.Dual Bias ResistorTransistorsLMUN5211DW1T1GNPN Silicon Surface Mount TransistorsSerieswith Monolithic Bias Resistor NetworkS-LMUN5211DW1T1GSeriesThe BRT (Bias Resistor Transistor) contains a single transistor with a monolithic biasnetwork consisting of two resistors; a series base resistor and a baseemitter resistor. These65digital transistor

 9.2. Size:145K  lrc
lmun5211t1g lmun5212t1g lmun5213t1g lmun5214t1g lmun5215t1g lmun5216t1g lmun5230t1g lmun5231t1g lmun5232t1g lmun5233t1g lmun5234t1g lmun5235t1g lmun5237t1g.pdf pdf_icon

LMUN5130T1G

LESHAN RADIO COMPANY, LTD.Bias Resistor TransistorLMUN5211T1GNPN Silicon Surface Mount TransistorSerieswith Monolithic Bias Resistor Network3This new series of digital transistors is designed to replace a singledevice and its external resistor bias network. The BRT (Bias Resistor1Transistor) contains a single transistor with a monolithic bias network con- 2sisting of two r

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