KSR1211 Todos los transistores

 

KSR1211 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: KSR1211
   Material: Si
   Polaridad de transistor: Pre-Biased-NPN
   Resistencia de Entrada Base R1 = 22 kOhm

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.3 W
   Tensión colector-base (Vcb): 40 V
   Tensión colector-emisor (Vce): 40 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 250 MHz
   Capacitancia de salida (Cc): 3.7 pF
   Ganancia de corriente contínua (hfe): 100
   Paquete / Cubierta: TO92S
 

 Búsqueda de reemplazo de KSR1211

   - Selección ⓘ de transistores por parámetros

 

KSR1211 Datasheet (PDF)

 ..1. Size:16K  samsung
 ksr1211.pdf pdf_icon

KSR1211

KSR1211 NPN EPITAXIAL SILICON TRANSISTORSWITCHING APPLICATION (Bias Resistor Built In)TO-92S Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R=22 ) Complement to KSR2211ABSOLUTE MAXIMUM RATINGS (T =25 )A Characteristic Symbol Rating UnitVCollector-Base Voltage VCBO 40VCollector-Emitter Voltage VCEO 40VEmitter-Base Volta

 8.1. Size:35K  samsung
 ksr1210.pdf pdf_icon

KSR1211

KSR1210 NPN EPITAXIAL SILICON TRANSISTORSWITCHING APPLICATION (Bias Resistor Built In)TO-92S Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R=10 ) Complement to KSR2210ABSOLUTE MAXIMUM RATINGS (T =25 )A Characteristic Symbol Rating UnitVCollector-Base Voltage VCBO 40VCollector-Emitter Voltage VCEO 40VEmitter-Base Volta

 8.2. Size:19K  samsung
 ksr1213.pdf pdf_icon

KSR1211

KSR1213 NPN EPITAXIAL SILICON TRANSISTORSWITCHING APPLICATION (Bias Resistor Built In)TO-92S Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1 =2.2 , R2=47 ) Complement to KSR2213ABSOLUTE MAXIMUM RATINGS (T =25 )A Characteristic Symbol Rating UnitCollector-Base Voltage VCBO 50 VCollector-Emitter Voltage VCEO 50 VEmitter-Base

 8.3. Size:19K  samsung
 ksr1214.pdf pdf_icon

KSR1211

KSR1214 NPN EPITAXIAL SILICON TRANSISTORSWITCHING APPLICATION (Bias Resistor Built In)TO-92S Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1 =4.7 , R2=47 ) Complement to KSR2214ABSOLUTE MAXIMUM RATINGS (T =25 )A Characteristic Symbol Rating UnitCollector-Base Voltage VCBO 50 VCollector-Emitter Voltage VCEO 50 VEmitter-Base

MOSTRAR MÁS

Otros transistores... KSR1203 , KSR1204 , KSR1205 , KSR1206 , KSR1207 , KSR1208 , KSR1209 , KSR1210 , 2SD669 , KSR1212 , KSR1213 , KSR1214 , KSR2201 , KSR2202 , KSR2203 , KSR2204 , KSR2205 .

History: NKT261 | TIP42C | 2SD1311 | BD815

 

 
Back to Top

 


 
.