KSR2214 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: KSR2214

Material: Si

Polaridad de transistor: Pre-Biased-PNP

Resistencia de Entrada Base R1 = 4.7 kOhm

Resistencia Base-Emisor R2 = 47 kOhm

Ratio típica de resistencia R1/R2 = 0.1

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.3 W

Tensión colector-base (Vcb): 50 V

Tensión colector-emisor (Vce): 50 V

Tensión emisor-base (Veb): 10 V

Corriente del colector DC máxima (Ic): 0.1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 200 MHz

Capacitancia de salida (Cc): 5.5 pF

Ganancia de corriente contínua (hFE): 68

Encapsulados: TO92S

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KSR2214 datasheet

 ..1. Size:19K  samsung
 ksr2214.pdf pdf_icon

KSR2214

KSR2214 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION (Bias Resistor Built In) TO-92S Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=4.7, R2=47 ) Complement to KSR1214 ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage VCEO -50 V Emitter-Base

 8.1. Size:33K  samsung
 ksr2210.pdf pdf_icon

KSR2214

KSR2210 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit TO-92S Built in bias Resistor (R=10 ) Complement to KSR1210 ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -40 V Emitter-Base Voltage V

 8.2. Size:17K  samsung
 ksr2212.pdf pdf_icon

KSR2214

KSR2212 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION (Bias Resistor Built In) TO-92S Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R=47 ) Complement to KSR1212 ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -40 V Emitter-Base Voltage

 8.3. Size:17K  samsung
 ksr2211.pdf pdf_icon

KSR2214

KSR2211 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION (Bias Resistor Built In) TO-92S Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R=22 ) Complement to KSR1211 ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -40 V Emitter-Base Voltage

MOSTRAR MÁS

Otros transistores... KSR2206, KSR2207, KSR2208, KSR2209, KSR2210, KSR2211, KSR2212, KSR2213, D882P, M54513FP, M54513P, M54522FP, MMBTRC101SS, MMBTRC102SS, MMBTRC103SS, MMBTRC104SS, MMBTRC105SS