MMUN2241LT1G Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MMUN2241LT1G
Código: A8U
Material: Si
Polaridad de transistor: Pre-Biased-NPN
Resistencia de Entrada Base R1 = 100 kOhm
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.246 W
Tensión colector-base (Vcb): 50 V
Tensión colector-emisor (Vce): 50 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hFE): 160
Encapsulados: SOT-23
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MMUN2241LT1G datasheet
mmun2241l mun2241 mun5241 mun5241t1g.pdf
MUN2241, MMUN2241L, MUN5241, DTC115TE, DTC115TM3, NSBC115TF3 Digital Transistors (BRT) R1 = 100 kW, R2 = 8 kW http //onsemi.com NPN Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network PIN 3 COLLECTOR This series of digital transistors is designed to replace a single (OUTPUT) PIN 1 device and its external resistor bias network. The Bias Resistor R1 BASE Transistor (
mmun2211 mmun2241.pdf
NPN Silicon Epitaxial Planar Transistor for switching and interface circuit and drive circuit applications Resistor Values Type R1 (K) R2 (K) MMUN2211 10 10 1.Base 2.Emitter 3.Collector MMUN2212 22 22 SOT-23 Plastic Package MMUN2213 47 47 MMUN2214 10 47 Collector MMUN2215 10 (Output) MMUN2216 4.7 R1 Base (Input) MMUN2230 1 1 R2 MMUN2231 2.2 2.2 Emi
mmun2240l mmun2240lt1g mun5240 mun5240t1g.pdf
MUN2240, MMUN2240L, MUN5240, DTC144TE, DTC144TM3, NSBC144TF3 Digital Transistors (BRT) R1 = 47 kW, R2 = 8 kW http //onsemi.com NPN Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network PIN 3 COLLECTOR This series of digital transistors is designed to replace a single (OUTPUT) PIN 1 device and its external resistor bias network. The Bias Resistor R1 BASE Transistor (B
Otros transistores... MMUN2236L, MMUN2236LT1G, MMUN2237L, MMUN2237LT1G, MMUN2238LT1G, MMUN2240L, MMUN2240LT1G, MMUN2241L, NJW0281G, MUN2111T1G, MUN2112T1G, MUN2113T1G, MUN2114T1G, MUN2115, MUN2115T1G, MUN2116, MUN2116T1G
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