2SA1051A Todos los transistores

 7.1. Size:146K  jmnic
 2sa1051.pdf

 7.2. Size:198K  inchange semiconductor
 2sa1051.pdf

isc Silicon PNP Power Transistor 2SA1051 DESCRIPTION High Current Capability Collector-Emitter Breakdown Voltage- V = -150V(Min.) (BR)CEO High Power Dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifer and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETE

 8.1. Size:24K  hitachi
 2sa1052.pdf

2SA1052 Silicon PNP Epitaxial Application Low frequency amplifier Outline MPAK 3 1 1. Emitter 2. Base 2 3. Collector 2SA1052 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 30 V Collector to emitter voltage VCEO 30 V Emitter to base voltage VEBO 5 V Collector current IC 100 mA Emitter current IE 100 mA Collector powe

 8.2. Size:145K  jmnic
 2sa1050.pdf

 8.3. Size:809K  kexin
 2sa1052.pdf

SMD Type or SMD Type TransistICs PNP Transistors 2SA1052 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features 1 2 Low frequency amplifier +0.05 0.95+0.1 -0.1 0.1 -0.01 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector to base voltage VCBO -30 V Collector to emitter voltage VCEO -30 V Emitter to base volta

 8.4. Size:198K  inchange semiconductor
 2sa1050.pdf

isc Silicon PNP Power Transistor 2SA1050 DESCRIPTION High Current Capability Collector-Emitter Breakdown Voltage- V = -140V(Min.) (BR)CEO Complement to Type 2SC2460 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifer and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARA